The state-of-the-art visible-blind ultraviolet (UV) photodetectors (PDs) are generally demonstrated to have typical photoconductor or photodiode structures, without the tunability to balance different photosensing parameters. Here, we propose a specially designed perovskite/GaN-based light-modulated bipolar junction transistor (BJT) for visible-blind UV photodetection. As the conduction-band-aligned p-n-p junction at the CH₃NH₃PbCl₃/GaN interface dominates the photocarrier dynamics, the saturated photocurrent collected with the electrodes on the perovskite film is linearly dependent on the optical power pumped on the GaN film with multiplication. This device reaches a saturated output at 0.5 V, reporting a responsivity of 0.43 A/W, a specific detectivity of 4.11 × 10¹² Jones, a rise/fall time of 70.50/71.83 μs, and the highest linear dynamic range of 159 dB. Our device provides a structure panel to optimize the trade-off between responsivity and response speed, with a comprehensive performance outperforming the published similar UV PDs and commercial products. Moreover, it can be readily integrated with GaN-based lighting devices for full-duplex communication in light-fidelity (LiFi) networks.

中文翻译：

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用于高综合性能可见盲紫外光电检测的钙钛矿/氮化镓基光调制双极结晶体管


最先进的可见盲紫外 (UV) 光电探测器 (PD) 通常被证明具有典型的光电导体或光电二极管结构，但不具备平衡不同光电传感参数的可调性。在这里，我们提出了一种专门设计的钙钛矿/GaN基光调制双极结晶体管（BJT），用于可见盲紫外光电检测。由于 CH ₃ NH ₃ PbCl ₃ /GaN 界面处的导带对准 p-n-p 结主导光载流子动力学，因此电极收集的饱和光电流钙钛矿薄膜上的光功率与 GaN 薄膜上泵浦的光功率成线性关系。该器件在 0.5 V 时达到饱和输出，响应率为 0.43 A/W，比探测率为 4.11 × 10 ¹² Jones，上升/下降时间为 70.50/71.83 μs，以及最高线性动态范围为 159 dB。我们的器件提供了一个结构面板来优化响应率和响应速度之间的权衡，其综合性能优于已发布的类似 UV PD 和商业产品。此外，它可以轻松与基于 GaN 的照明设备集成，以实现光保真 (LiFi) 网络中的全双工通信。