Previous work that studied hexagonal boron nitride (h‐BN) memristor DC resistive‐switching characteristics is extended to include an experimental understanding of their dynamic behavior upon programming or synaptic weight update. The focus is on the temporal resistive switching response to driving stimulus (programming voltage pulses) effecting conductance updates during training in neural network crossbar implementations. Test arrays are fabricated at the wafer level, enabled by the transfer of CVD‐grown few‐layer (8 layer) or multi‐layer (18 layer) h‐BN films. A comprehensive study of their temporal response under various conditions–voltage pulse amplitude, edge rate (pulse rise/fall times), and temperature–provides new insights into the resistive switching process toward optimized devices and improvements in their implementation of artificial neural networks. The h‐BN memristors can achieve multi‐state operation through ultrafast pulsed switching (< 25 ns) with high energy efficiency (≈10 pJ pulse−1).

中文翻译：

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h-BN阻变时间响应的研究


先前研究六方氮化硼（h-BN）忆阻器直流电阻开关特性的工作已扩展到包括对其在编程或突触权重更新时的动态行为的实验理解。重点是在神经网络交叉开关实现训练期间对驱动刺激（编程电压脉冲）影响电导更新的时间电阻开关响应。测试阵列在晶圆级制造，通过转移 CVD 生长的多层（8 层）或多层（18 层）h-BN 薄膜来实现。对它们在各种条件下的时间响应（电压脉冲幅度、边沿速率（脉冲上升/下降时间）和温度）的全面研究，为优化器件的电阻开关过程以及人工神经网络实施的改进提供了新的见解。 h-BN忆阻器可以通过超快脉冲开关（< 25 ns）实现多态操作，并具有高能效（约10 pJ脉冲−1）。