Ultralow-loss thermosetting resins cured via free-radical polymerization have been extensively applied as the polymeric matrix in high-frequency and high-speed printed circuit boards and electronic packaging substrates. In recent years, silicon doping has been commonly acknowledged for its potential to reduce the dielectric loss of materials. Three silicon-containing cross-linkers are investigated in this work for use in ultralow-loss thermosetting poly(phenylene oxide) (PPO) materials. The study compares the influence of these silicon-containing cross-linkers with two commercially available cross-linkers, focusing on their effects on curing temperature, dielectric properties, thermal characteristics, moisture resistance, and aging resistance. Silicon-containing cross-linkers showed appropriate reaction temperatures that were comparable to that of conventional epoxy materials. More importantly, they decreased the dielectric loss of cured samples with the lowest dissipation factor (D_f) value of 0.00159 at 10 GHz. The addition of silicon atoms also slowed the deterioration of dielectric properties during high-temperature aging experiments and reduced moisture absorption in PPO samples. However, there are also concerns regarding the reduction in the glass-transition temperature and the increase in the coefficient of thermal expansion. These results demonstrate the promising potential of silicon-containing cross-linkers in enhancing the performance of ultralow-loss PPO materials for advanced electronic packaging applications.

中文翻译：

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多乙烯基含硅交联剂在超低介电损耗自由基交联热固性材料中的应用


通过自由基聚合固化的超低损耗热固性树脂作为聚合物基体已广泛应用于高频高速印刷电路板和电子封装基板中。近年来，硅掺杂因其降低材料介电损耗的潜力而被普遍认可。这项工作研究了三种含硅交联剂用于超低损耗热固性聚苯醚 (PPO) 材料。该研究将这些含硅交联剂与两种市售交联剂的影响进行了比较，重点关注它们对固化温度、介电性能、热特性、防潮性和耐老化性的影响。含硅交联剂显示出与传统环氧材料相当的合适反应温度。更重要的是，它们降低了固化样品的介电损耗，在 10 GHz 时损耗因数 (D _f ) 值为 0.00159。硅原子的添加还减缓了高温老化实验中介电性能的恶化，并降低了PPO样品的吸湿性。然而，也存在玻璃化转变温度降低和热膨胀系数增加的问题。这些结果证明了含硅交联剂在增强先进电子封装应用的超低损耗 PPO 材料性能方面的巨大潜力。