Spin accumulation in semiconductor structures at room temperature and without magnetic fields is key to enable a broader range of optoelectronic functionality¹. Current efforts are limited owing to inherent inefficiencies associated with spin injection across semiconductor interfaces². Here we demonstrate spin injection across chiral halide perovskite/III–V interfaces achieving spin accumulation in a standard semiconductor III–V (Al_xGa_1−x)_0.5In_0.5P multiple quantum well light-emitting diode. The spin accumulation in the multiple quantum well is detected through emission of circularly polarized light with a degree of polarization of up to 15 ± 4%. The chiral perovskite/III–V interface was characterized with X-ray photoelectron spectroscopy, cross-sectional scanning Kelvin probe force microscopy and cross-sectional transmission electron microscopy imaging, showing a clean semiconductor/semiconductor interface at which the Fermi level can equilibrate. These findings demonstrate that chiral perovskite semiconductors can transform well-developed semiconductor platforms into ones that can also control spin.

在室温和无磁场的情况下，半导体结构中的自旋积累是实现更广泛的光电功能 ¹ 的关键。由于与跨半导体界面的自旋注入相关的固有低效率 ² ，当前的努力受到限制。在这里，我们演示了跨手性卤化物钙钛矿/III-V界面的自旋注入，在标准半导体III-V (Al _x Ga _1−x ) _0.5 In中实现自旋积累 _0.5 P多量子阱发光二极管。通过发射偏振度高达 15 ± 4% 的圆偏振光来检测多量子阱中的自旋积累。通过X射线光电子能谱、截面扫描开尔文探针力显微镜和截面透射电子显微镜成像对手性钙钛矿/III-V界面进行了表征，显示出干净的半导体/半导体界面，费米能级可以在该界面达到平衡。这些发现表明，手性钙钛矿半导体可以将成熟的半导体平台转变为可以控制自旋的平台。