Ultrawide bandgap (UWBG) semiconductors offer new possibilities to develop power electronics. High voltage operation for the off-state as well as high temperature stability of the devices in on-state are required. More than AlGaN/GaN heterostructures, AlGaN/AlGaN heterostructures are promising candidates to meet these criteria. Furthermore, the possibility to choose the Al molar fraction of AlGaN paves the way to more tunable heterostructures. In this study, the electronic transport properties of AlGaN channel heterostructures grown on silicon substrates with various aluminum contents, focusing on the temperature dependence of the electron mobility, is investigated. Experimental results from Hall effect measurements are confronted with carrier scattering models and deep level transient spectroscopy analysis to quantify limiting effects. These results demonstrated the significant potential of Al-rich AlGaN channel heterostructures grown on silicon substrates for high power and high temperature applications.

中文翻译：

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硅上富铝 AlGaN 沟道高电子迁移率晶体管：电子迁移率高温稳定性的相关方法


超宽带隙 (UWBG) 半导体为开发电力电子器件提供了新的可能性。要求器件在关态下具有高电压运行，并且在导通态下具有高温稳定性。 AlGaN/AlGaN 异质结构比 AlGaN/GaN 异质结构更有希望满足这些标准。此外，选择 AlGaN 的 Al 摩尔分数的可能性为更可调的异质结构铺平了道路。在这项研究中，研究了在不同铝含量的硅衬底上生长的 AlGaN 沟道异质结构的电子传输特性，重点研究了电子迁移率的温度依赖性。霍尔效应测量的实验结果需要采用载流子散射模型和深层次瞬态光谱分析来量化限制效应。这些结果证明了在硅衬底上生长的富铝 AlGaN 沟道异质结构在高功率和高温应用中的巨大潜力。