Bulk crystals of undoped and In-doped (on the order of 1%) SnSe₂ were synthesized using a solid-state temperature-gradient method and characterized by diffuse reflection, Raman scattering, ARPES and STM studies. An n-to-p crossover was observed as a function of the indium concentration in Hall measurements at 300 K, but the Seebeck coefficient is n-type at that temperature for all studied indium concentrations. The measured resistivity at 300 K reaches a maximum at the minimum carrier concentration. Our results suggest a multiband semiconducting nature for doped SnSe₂, which provides insight into the exploration of enhanced thermoelectric performance and exotic electric behavior.

中文翻译：

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掺铟的 SnSe2 晶体


使用固态温度梯度方法合成了未掺杂和 In 掺杂（大约 1%）SnSe ₂ 的块状晶体，并通过漫反射、拉曼散射、ARPES 和 STM 研究进行了表征。在 300 K 的霍尔测量中，观察到 n 到 p 的交叉是铟浓度的函数，但在该温度下，对于所有研究的铟浓度，塞贝克系数都是 n 型的。 300 K 时测得的电阻率在载流子浓度最小时达到最大值。我们的结果表明掺杂 SnSe ₂ 具有多带半导体性质，这为探索增强的热电性能和奇异的电行为提供了见解。