<br>WS2/Bi2O2Se 异质结中的可编程界面能带配置,ACS Nano

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WS2/Bi2O2Se 异质结中的可编程界面能带配置
ACS Nano ( IF 15.8 ) Pub Date : 2024-06-18 , DOI: 10.1021/acsnano.4c02496
Hanwen Zhang _{1,

2} , Jianhui Fu ₃ , Alexandra Carvalho ₄ , Eng Tuan Poh ₂ , Jing-Yang Chung _{5,

6} , Minjun Feng ₃ , Yinzhu Chen ₇ , Bo Wang ₃ , Qiuyu Shang ₃ , Hengxing Yang ₂ , Zheng Zhang ₈ , Sharon Xiaodai Lim ₂ , Weibo Gao ₃ , Silvija Gradečak _{5,

6} , Cheng-Wei Qiu ₉ , Junpeng Lu ₇ , Chunnian He _{1,

10} , Tze Chien Sum ₃ , Chorng Haur Sow ₂

Affiliation

Joint School of the National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou 350207, China.
Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore.
Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore.
Institute for Functional Intelligent Materials, National University of Singapore, Singapore 117544, Singapore.
Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore.
Applied Materials─NUS Advanced Materials Corporate Lab, Singapore 117608, Singapore.
Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing 211189, China.
Agency for Science, Technology and Research, Institute of Materials Research and Engineering, 2 Fusionopolis Way, Innovis, Singapore 138634, Singapore.
Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore.
School of Materials Science and Engineering, Tianjin Key Laboratory of Composite and Functional Materials, Tianjin University, Tianjin 300350, People's Republic of China.

基于过渡金属二硫属化物 (TMD) 的范德华异质结为操纵发光和光捕获行为提供了先进的策略。决定光-材料相互作用的关键因素是异质结界面处的能带排列，特别是I型和II型排列之间的区别。然而，在不改变构成材料的情况下将能带排列从一种类型改变为另一种类型是非常困难的。在这里，我们利用具有与厚度相关的带隙的Bi ₂ O ₂ Se作为底层，提出了一种在WS ₂ /Bi ₂ O ₂ Se异质结中设计界面带结构的创新策略。特别是，我们通过增加薄膜厚度，实现了从 I 型（Bi ₂ O ₂ Se 跨接 WS ₂ ）到 II 型，最后到 I 型（WS ₂跨接 Bi ₂ O ₂ Se）的能带排列调整。 Bi ₂ O ₂ Se底层从单层到多层。我们使用稳态和瞬态光谱以及密度泛函理论计算验证了这种能带结构的转换。利用这种材料组合，我们进一步设计了一种复杂的能带结构，其中包含 I 型（WS ₂跨 Bi ₂ O ₂ Se，荧光淬灭）和 I 型（Bi ₂ SeO ₅跨 WS ₂ ，荧光恢复）排列。通过聚焦激光束 (FLB) 检测一个样品。通过对 FLB 轨迹进行编程，我们在 WS ₂上实现了预先设计的局部荧光微图案，而无需改变其固有原子结构。这种有效的能带架构设计策略代表了利用 TMD 异质结潜力实现多功能光子应用的重大飞跃。

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Programmable Interfacial Band Configuration in WS2/Bi2O2Se Heterojunctions

van der Waals heterojunctions based on transition-metal dichalcogenides (TMDs) offer advanced strategies for manipulating light-emitting and light-harvesting behaviors. A crucial factor determining the light–material interaction is in the band alignment at the heterojunction interface, particularly the distinctions between type-I and type-II alignments. However, altering the band alignment from one type to another without changing the constituent materials is exceptionally difficult. Here, utilizing Bi₂O₂Se with a thickness-dependent band gap as a bottom layer, we present an innovative strategy for engineering interfacial band configurations in WS₂/Bi₂O₂Se heterojunctions. In particular, we achieve tuning of the band alignment from type-I (Bi₂O₂Se straddling WS₂) to type-II and finally to type-I (WS₂ straddling Bi₂O₂Se) by increasing the thickness of the Bi₂O₂Se bottom layer from monolayer to multilayer. We verified this band architecture conversion using steady-state and transient spectroscopy as well as density functional theory calculations. Using this material combination, we further design a sophisticated band architecture incorporating both type-I (WS₂ straddles Bi₂O₂Se, fluorescence-quenched) and type-I (Bi₂SeO₅ straddles WS₂, fluorescence-recovered) alignments in one sample through focused laser beam (FLB). By programming the FLB trajectory, we achieve a predesigned localized fluorescence micropattern on WS₂ without changing its intrinsic atomic structure. This effective band architecture design strategy represents a significant leap forward in harnessing the potential of TMD heterojunctions for multifunctional photonic applications.

更新日期：2024-06-18

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