Memristive devices based on the valence change mechanism are highly interesting candidates for data storage and hardware implementation of synapses in neuromorphic circuits. Although long-term retention is often required for data storage applications, a slight resistance drift of the low resistive state (LRS) is observed even for stable devices. For other devices, the LRS has been observed to decay rapidly to the high resistive state (HRS). These types of devices are of interest for neuromorphic circuits where short-term plasticity is required. In this work, the LRS relaxation of volatile, crystalline Pt/SrTiO₃/Nb:SrTiO₃: devices is investigated in detail, yielding time constants ranging from milliseconds to seconds. The decay is analyzed in terms of the Gibbs free energy gradient for the contribution of oxygen ion migration. A relaxation model based on drift-diffusion dynamics is presented. The model may serve as a tool for developing guidelines and design rules for future volatile memristive technology based on Schottky barrier mediated electron transport.

中文翻译：

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解决挥发性价态变化记忆的松弛问题


基于价态变化机制的忆阻器件是神经形态电路中突触的数据存储和硬件实现的非常有趣的候选者。尽管数据存储应用通常需要长期保持，但即使对于稳定的器件，也会观察到低电阻状态 (LRS) 的轻微电阻漂移。对于其他器件，已观察到 LRS 快速衰减到高阻状态 (HRS)。这些类型的设备对于需要短期可塑性的神经形态电路很感兴趣。在这项工作中，详细研究了挥发性结晶 Pt/SrTiO ₃ /Nb:SrTiO ₃ 器件的 LRS 弛豫，产生从毫秒到秒的时间常数。根据吉布斯自由能梯度分析衰变，以了解氧离子迁移的贡献。提出了一种基于漂移扩散动力学的松弛模型。该模型可以作为为基于肖特基势垒介导的电子传输的未来易失性忆阻技术制定指南和设计规则的工具。