Doped two-dimensional (2D) materials hold significant promise for advancing many technologies, such as microelectronics, optoelectronics, and energy storage. Herein, n-type 2D oxidized Si nanosheets, namely n-type siloxene (n-SX), are employed as Li-ion battery anodes. Via thermal evaporation of sodium hypophosphite at 275 °C, P atoms are effectively incorporated into siloxene (SX) without compromising its 2D layered morphology and unique Kautsky-type crystal structure. Further, selective nucleophilic substitution occurs, with only Si atoms being replaced by P atoms in the O₃≡Si–H tetrahedra. The resulting n-SX possesses two delocalized electrons arising from the presence of two electron donor types: (i) P atoms residing in Si sites and (ii) H vacancies. The doping concentrations are varied by controlling the amount of precursors or their mean free paths. Even at 2000 mA g⁻¹, the n-SX electrode with the optimized doping concentration (6.7 × 10¹⁹ atoms cm⁻³) delivers a capacity of 594 mAh g⁻¹ with a 73% capacity retention after 500 cycles. These improvements originate from the enhanced kinetics of charge transport processes, including electronic conduction, charge transfer, and solid-state diffusion. The approach proposed herein offers an unprecedented route for engineering SX anodes to boost Li-ion storage.

掺杂二维 (2D) 材料对于推进微电子、光电子和能源存储等许多技术具有重大前景。这里，n型2D氧化Si纳米片，即n型硅氧烷(n-SX)，被用作锂离子电池阳极。通过次磷酸钠在 275 °C 的热蒸发，P 原子有效地融入硅氧烷 (SX) 中，而不会影响其二维层状形态和独特的考茨基型晶体结构。此外，发生选择性亲核取代，O ₃ ≡Si-H 四面体中只有 Si 原子被 P 原子取代。由此产生的 n-SX 拥有两个离域电子，这是由于两种电子供体类型的存在而产生的：(i) 位于 Si 位点的 P 原子和 (ii) H 空位。通过控制前体的量或其平均自由程来改变掺杂浓度。即使在 2000 mA g ⁻¹ 下，具有优化掺杂浓度（6.7 × 10 ¹⁹ 原子 cm ⁻³ ）的 n-SX 电极也能提供 594 mAh 的容量g ⁻¹ 500 次循环后容量保持率为 73%。这些改进源于电荷传输过程动力学的增强，包括电子传导、电荷转移和固态扩散。本文提出的方法为设计 SX 阳极以提高锂离子存储提供了前所未有的途径。