Group-IV GeSn alloys have emerged as a promising platform for short-wave infrared (SWIR) photodetection and imaging, owing to their tunable bandgap and compatibility with standard complementary metal–oxide–semiconductor (CMOS) processing. A self-powered, CMOS-compatible SWIR image sensor based on 4 × 4 GeSn p–i–n heterojunction photodetector pixel arrays (PDAs) monolithically integrated onto a Si platform is reported. Incorporating 6.3% Sn reduction in the direct bandgap, expansion of the photodetection range up to 2100 nm was achieved. The fabricated GeSn PDAs exhibit a peak detectivity of approximately 1.06 × 10⁹ cm Hz^1/2 W^–1, surpassing the performance of commercially available PbSe and InSb IR PDs in uncooled conditions. Moreover, SWIR images are successfully obtained by using the self-powered GeSn PDAs, demonstrating their capability under both self-powered and uncooled conditions. This research paves the way for the development of CMOS-compatible, high-performance, cost-effective, and energy-efficient SWIR imaging and cameras for a range of previously unexplored SWIR applications.

中文翻译：

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基于 GeSn 光电探测器阵列的 CMOS 兼容自供电短波红外成像仪


由于其带隙可调且与标准互补金属氧化物半导体 (CMOS) 处理兼容，IV 族 GeSn 合金已成为短波红外 (SWIR) 光电探测和成像的有前景的平台。据报道，一种自供电、CMOS 兼容的 SWIR 图像传感器基于单片集成到 Si 平台上的 4 × 4 GeSn p-i-n 异质结光电探测器像素阵列 (PDA)。通过将直接带隙中的 Sn 减少 6.3%，将光电探测范围扩展至 2100 nm。所制造的 GeSn PDA 表现出约 1.06 × 10 ⁹ cm Hz ^1/2 W ^–1 的峰值探测率，超过了商用 PbSe 和 InSb IR PD 的性能。未冷却的条件。此外，通过使用自供电GeSn PDA成功获得了短波红外图像，展示了其在自供电和非冷却条件下的能力。这项研究为开发 CMOS 兼容、高性能、经济高效且节能的短波红外成像和相机铺平了道路，适用于一系列先前未开发的短波红外应用。