Magnetic skyrmions are topological spin textures that are regarded as promising information carriers for next-generation spintronic memory and computing devices. For practical applications, their deterministic generation, manipulation, and efficient detection are the most critical aspects. Although the generation and manipulation of skyrmions have been extensively studied, efficient electrical detection of mobile skyrmions by using techniques that are compatible with modern magnetic memory technology, remains to be adequately addressed. Here, through integrating magnetic multilayers that host nanoscale skyrmions, together with the magnetic tunnel junctions (MTJ), we demonstrate the electrical detection of skyrmions by using the tunneling magnetoresistance (TMR) effect with a TMR ratio that reaches over 100% at room temperature. By building prototype three-terminal racetrack-like devices, we further show the electrical detection of mobile skyrmions by recording the time-dependent TMR ratios. Along with many recent developments, our results could advance the development of skyrmionic memory and logic devices.

磁性斯格明子是拓扑自旋纹理，被认为是下一代自旋电子存储器和计算设备的有前途的信息载体。对于实际应用，它们的确定性生成、操作和有效检测是最关键的方面。尽管斯格明子的产生和操纵已被广泛研究，但通过使用与现代磁存储技术兼容的技术对移动斯格明子进行有效的电检测仍有待充分解决。在这里，通过将承载纳米级斯格明子的磁性多层与磁隧道结（MTJ）集成在一起，我们展示了利用隧道磁阻（TMR）效应对斯格明子进行电学检测，其TMR比率在室温下达到100％以上。通过构建原型三端跑道式设备，我们通过记录时间相关的 TMR 比率进一步展示了移动斯格明子的电检测。连同最近的许多进展，我们的结果可以推动斯格明子存储器和逻辑器件的发展。