The persistence of voltage-switchable collective electronic phenomena down to the atomic scale has extensive implications for area- and energy-efficient electronics, especially in emerging nonvolatile memory technology. We investigate the performance of a ferroelectric field-effect transistor (FeFET) based on sliding ferroelectricity in bilayer boron nitride at room temperature. Sliding ferroelectricity represents a different form of atomically thin two-dimensional (2D) ferroelectrics, characterized by the switching of out-of-plane polarization through interlayer sliding motion. We examined the FeFET device employing monolayer graphene as the channel layer, which demonstrated ultrafast switching speeds on the nanosecond scale and high endurance exceeding 10 11 switching cycles, comparable to state-of-the-art FeFET devices. These characteristics highlight the potential of 2D sliding ferroelectrics for inspiring next-generation nonvolatile memory technology.

中文翻译：

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基于滑动铁电体的超快高耐久存储器


电压可切换集体电子现象在原子尺度上的持续存在对面积和能源效率高的电子产品具有广泛的影响，特别是在新兴的非易失性存储技术中。我们研究了室温下双层氮化硼中基于滑动铁电性的铁电场效应晶体管 (FeFET) 的性能。滑动铁电性代表原子薄二维 (2D) 铁电体的不同形式，其特征是通过层间滑动运动切换面外极化。我们检查了采用单层石墨烯作为沟道层的 FeFET 器件，该器件表现出纳秒级的超快开关速度和超过 10 11 个开关周期的高耐久性，与最先进的 FeFET 器件相当。这些特性凸显了二维滑动铁电体在激发下一代非易失性存储技术方面的潜力。