Ferroelectric materials have switchable electrical polarization that is appealing for high-density nonvolatile memories. However, inevitable fatigue hinders practical applications of these materials. Fatigue-free ferroelectric switching could dramatically improve the endurance of such devices. We report a fatigue-free ferroelectric system based on the sliding ferroelectricity of bilayer 3R molybdenum disulfide (3R-MoS 2 ). The memory performance of this ferroelectric device does not show the wake-up effect at low cycles or a substantial fatigue effect after 10 6 switching cycles under different pulse widths. The total stress time of the device under an electric field is up to 10 5 s, which is long relative to other devices. Our theoretical calculations reveal that the fatigue-free feature of sliding ferroelectricity is due to the immobile charge defects in sliding ferroelectricity.

中文翻译：

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利用层间滑动开关开发抗疲劳铁电体


铁电材料具有可切换的电极化特性，这对高密度非易失性存储器很有吸引力。然而，不可避免的疲劳阻碍了这些材料的实际应用。无疲劳铁电开关可以显着提高此类设备的耐用性。我们报告了一种基于双层 3R 二硫化钼 (3R-MoS 2 ) 滑动铁电性的无疲劳铁电系统。该铁电器件的存储性能在低周期时没有表现出唤醒效应，在不同脉冲宽度下经过10 6 个开关周期后没有表现出明显的疲劳效应。该器件在电场下的总应力时间长达10 5 s，相对于其他器件来说较长。我们的理论计算表明，滑动铁电体的无疲劳特性是由于滑动铁电体中的固定电荷缺陷造成的。