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Constructing Built-In Electric Fields with Semiconductor Junctions and Schottky Junctions Based on Mo–MXene/Mo–Metal Sulfides for Electromagnetic Response
Nano-Micro Letters ( IF 31.6 ) Pub Date : 2024-06-11 , DOI: 10.1007/s40820-024-01449-7
Xiaojun Zeng , Xiao Jiang , Ya Ning , Yanfeng Gao , Renchao Che

  • Mo–MXene/Mo–metal sulfides with semiconductor junctions and Mott–Schottky junctions are designed.

  • Built-in electric field are constructed in semiconductor–semiconductor–metal heterostructure, enhancing dielectric polarization and impedance matching.

  • Density functional theory calculations and Radar cross-section simulations confirmed the excellent electromagnetic wave absorption ability of heterostructures.



中文翻译:


基于Mo-MXene/Mo-金属硫化物的半导体结和肖特基结构建内置电场以实现电磁响应



  • 设计了具有半导体结和莫特-肖特基结的 Mo-MXene/Mo-金属硫化物。


  • 半导体-半导体-金属异质结构构建了内置电场,增强了介电极化和阻抗匹配。


  • 密度泛函理论计算和雷达截面模拟证实了异质结构优异的电磁波吸收能力。

更新日期:2024-06-11
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