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Versatile Landscape of Low-k Polyimide: Theories, Synthesis, Synergistic Properties, and Industrial Integration
Chemical Reviews ( IF 51.4 ) Pub Date : 2024-06-07 , DOI: 10.1021/acs.chemrev.3c00802
Xiaodi Dong 1 , Baoquan Wan 1 , Jun-Wei Zha 1, 2
Affiliation  

The development of microelectronics and large-scale intelligence nowadays promotes the integration, miniaturization, and multifunctionality of electronic and devices but also leads to the increment of signal transmission delays, crosstalk, and energy consumption. The exploitation of materials with low permittivity (low-k) is crucial for realizing innovations in microelectronics. However, due to the high permittivity of conventional interlayer dielectric material (k ∼ 4.0), it is difficult to meet the demands of current microelectronic technology development (k < 3.0). Organic dielectric materials have attracted much attention because of their relatively low permittivity owing to their low material density and low single bond polarization. Polyimide (PI) exhibits better application potential based on its well permittivity tunability (k = 1.1–3.2), high thermal stability (>500 °C), and mechanical property (modulus of elasticity up to 3.0–4.0 GPa). In this review, based on the synergistic relationship of dielectric parameters of materials, the development of nearly 20 years on low-k PI is thoroughly summarized. Moreover, process strategies for modifying low-k PI at the molecular level, multiphase recombination, and interface engineering are discussed exhaustively. The industrial application, technological challenges, and future development of low-k PI are also analyzed, which will provide meaningful guidance for the design and practical application of multifunctional low-k materials.

中文翻译:


低k聚酰亚胺的多功能景观:理论、合成、协同性能和工业整合



当今微电子和大规模智能化的发展促进了电子和器件的集成化、小型化和多功能化,但也导致了信号传输延迟、串扰和能耗的增加。低介电常数(低k )材料的开发对于实现微电子领域的创新至关重要。然而,由于传统层间介质材料的介电常数较高( k∼4.0 ),难以满足当前微电子技术发展的要求( k <3.0)。有机介电材料因其低材料密度和低单键极化而具有相对较低的介电常数而备受关注。聚酰亚胺(PI)因其良好的介电常数可调性( k = 1.1-3.2)、高热稳定性(>500℃)和机械性能(弹性模量高达3.0-4.0 GPa)而展现出更好的应用潜力。本文基于材料介电参数的协同关系,对低k PI近20年的发展进行了全面的总结。此外,还详尽讨论了在分子水平上改性低k PI、多相复合和界面工程的工艺策略。还分析了low- k PI的工业应用、技术挑战和未来发展,这将为多功能low- k材料的设计和实际应用提供有意义的指导。
更新日期:2024-06-07
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