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Low reflective index, highly transparent, and ultra-low dielectric constant materials prepared via effective copolymerization of 4-methyl-1-pentene and a Si-containing α,ω-diolefin
Polymer Chemistry ( IF 4.1 ) Pub Date : 2024-06-01 , DOI: 10.1039/d4py00412d
Yafei Wang 1 , Dong Huang 1 , Xianhang Gao 1 , Fei Wang 1 , Hao Cai 1 , Li Pan 1 , Yuesheng Li 1
Affiliation  

Manufacturing composites with low-dielectric constants is essential for the development of communication-related technologies. Here, we present a simple method for preparing a series of novel ultra-low dielectric constant materials with tunable properties. These polycarbosilane-based polymers with excellent properties were prepared via the copolymerization of 4-methyl-1-pentene with 3,3-dimethyl-3-silane-1,5-hexadiene using a dimethyl(pyridylamido) hafnium/[Ph3C][B(C6F5)4]/AliBu3 catalytic system. The resulting thin film samples, without porosity, showed excellent dielectric properties, maintaining stable and ultra-low dielectric constants below 2.0 (at 25 °C, 1 MHz). As the incorporation of DSH into the copolymers increased, the dielectric constant gradually decreased to 1.98. In addition, the introduction of C–Si-containing cyclic units allowed for easy tuning of the copolymers’ glass transition temperature, and tensile properties. The introduction of C–Si bonds provides a simple and generally feasible strategy for developing new materials with low dielectric constants at high frequencies.

中文翻译:


4-甲基-1-戊烯与含硅α,ω-二烯烃有效共聚制备低反射率、高透明、超低介电常数材料



制造低介电常数复合材料对于通信相关技术的发展至关重要。在这里,我们提出了一种制备一系列具有可调性能的新型超低介电常数材料的简单方法。这些具有优异性能的聚碳硅烷基聚合物是通过使用二甲基(吡啶酰氨基)铪/[Ph 3 C][B(C 6 F 5 ) 4 ]/AlBu 3 催化体系。所得薄膜样品无孔隙,表现出优异的介电性能,保持稳定且低于 2.0 的超低介电常数(在 25 °C,1 MHz 下)。随着共聚物中DSH含量的增加,介电常数逐渐降低至1.98。此外,引入含 C-Si 的环状单元可以轻松调节共聚物的玻璃化转变温度和拉伸性能。 C-Si键的引入为开发高频低介电常数新材料提供了一种简单且普遍可行的策略。
更新日期:2024-06-06
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