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Dynamic Analytical Switching Loss Model of SiC MOSFET Considering Threshold Voltage Instability
IEEE Transactions on Power Electronics ( IF 6.6 ) Pub Date : 2024-05-28 , DOI: 10.1109/tpel.2024.3406517 Yumeng Cai 1 , Peng Sun 1 , Yuankui Zhang 1 , Cong Chen 1 , Zhibin Zhao 1 , Xuebao Li 1 , Lei Qi 1 , Zhong Chen 2 , Hans-Peter Nee 3
中文翻译：
考虑阈值电压不稳定性的 SiC MOSFET 动态解析开关损耗模型
更新日期：2024-05-28
IEEE Transactions on Power Electronics ( IF 6.6 ) Pub Date : 2024-05-28 , DOI: 10.1109/tpel.2024.3406517 Yumeng Cai 1 , Peng Sun 1 , Yuankui Zhang 1 , Cong Chen 1 , Zhibin Zhao 1 , Xuebao Li 1 , Lei Qi 1 , Zhong Chen 2 , Hans-Peter Nee 3
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中文翻译：
考虑阈值电压不稳定性的 SiC MOSFET 动态解析开关损耗模型
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