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Degradation Mechanisms of SiC MOSFET Power Module with Cu-Cu Die Top Interconnects under Power Cycling Stress
IEEE Journal of Emerging and Selected Topics in Power Electronics ( IF 4.6 ) Pub Date : 2024-05-28 , DOI: 10.1109/jestpe.2024.3406558 Yidian Shi 1 , Yuan Chen 2 , Wenhui Zhu 3 , Hu He 3
中文翻译：
具有 Cu-Cu 芯片顶部互连的 SiC MOSFET 功率模块在功率循环应力下的退化机制
更新日期：2024-05-28
IEEE Journal of Emerging and Selected Topics in Power Electronics ( IF 4.6 ) Pub Date : 2024-05-28 , DOI: 10.1109/jestpe.2024.3406558 Yidian Shi 1 , Yuan Chen 2 , Wenhui Zhu 3 , Hu He 3
Affiliation
中文翻译：
具有 Cu-Cu 芯片顶部互连的 SiC MOSFET 功率模块在功率循环应力下的退化机制
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