In this work, we present a photonic integrated platform based on buried InGaAs waveguides with InP cladding that operates over a large mid-infrared (mid-IR) spectral range. Thanks to wet-etch fabrication patterning and Fe doping, low propagation losses below 1.2 dB/cm (0.3 cm^–1 loss coefficient) have been obtained between 4.6 and 11.2 μm wavelengths (890–1960 cm^–1 wavenumber), in both transverse electric (TE) and transverse magnetic (TM) polarization modes. The possibility of monolithically integrating such waveguides with mid-IR sources offers promising perspectives for developing broadband, homogeneously integrated systems.

中文翻译：

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长波红外低损耗埋入式 InGaAs/InP 集成波导


在这项工作中，我们提出了一种基于带有 InP 包层的埋置 InGaAs 波导的光子集成平台，该平台可在较大的中红外 (mid-IR) 光谱范围内运行。得益于湿法蚀刻制造图案和 Fe 掺杂，在 4.6 至 11.2 μm 波长 (890–1960 cm ^–1