<br>正性光刻胶的最新进展：机理和制造,Materials

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正性光刻胶的最新进展：机理和制造
Materials ( IF 3.1 ) Pub Date : 2024-05-25 , DOI: 10.3390/ma17112552
Muhammad Hassaan ₁ , Umama Saleem ₁ , Akash Singh ₁ , Abrar Jawad Haque ₁ , Kaiying Wang ₁

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光刻胶是光刻中的基本材料，对于微电子器件、MEMS 和纳米结构中的精确图案化至关重要。本文深入回顾了正性光刻胶研究和开发的最新进展，重点讨论了控制其行为的基本机制，探索创新的制造技术，并强调了所讨论的光刻胶类别的优势。本文首先讨论了开发新型光刻胶技术的必要性，强调了与采用极紫外光刻技术相关的问题，并通过开发具有改进的图案特征、分辨率和灵敏度的先进正性光刻胶材料来解决这些挑战。随后，讨论了不同类型和亚型光刻胶的工作机制和合成方法，从非化学放大光刻胶、有机光刻胶和无机-有机混合光刻胶开始，逐步发展到干膜光刻胶，并重点介绍了每种光刻胶的优点。本文最后讨论了光刻领域的未来研究（优先考虑与环境影响、改进光刻胶材料和性能以及先进量子技术的利用相关的问题）如何有助于彻底改变光刻技术。

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Recent Advances in Positive Photoresists: Mechanisms and Fabrication

Photoresists are fundamental materials in photolithography and are crucial for precise patterning in microelectronic devices, MEMS, and nanostructures. This paper provides an in-depth review of recent advancements in positive photoresist research and development, focusing on discussion regarding the underlying mechanisms governing their behavior, exploring innovative fabrication techniques, and highlighting the advantages of the photoresist classes discussed. The paper begins by discussing the need for the development of new photoresist technologies, highlighting issues associated with adopting extreme ultraviolet photolithography and addressing these challenges through the development of advanced positive-tone resist materials with improved patterning features, resolution, and sensitivity. Subsequently, it discusses the working mechanisms and synthesis methods of different types and subtypes of photoresists, starting from non-chemically amplified, organic, and inorganic–organic hybrid photoresists and progressing to dry film resists, with an emphasis on the upsides of each. The paper concludes by discussing how future research in the field of lithography—prioritizing concerns related to environmental impacts, improved photoresist material and properties, and utilization of advanced quantum technology—can assist with revolutionizing lithography techniques.

更新日期：2024-05-25

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