The emission properties of InGaN/GaN μ-light-emitting diodes (LEDs) of different sizes and shapes were investigated by spectrally resolved and time-correlated cathodoluminescence spectroscopy. This approach provides high spatial and temporal resolution, allowing us to simultaneously measure CL spectra and carrier lifetimes at the single μ-LED level. It also enables us to investigate the correlation between these parameters within individual μ-LEDs and across multiple devices. Our observations show a large variation in CL intensity between similarly sized μ-LEDs, particularly in the smallest samples. This variation correlates with changes in the emission wavelength and has been attributed to differences in injection efficiency between samples caused by V-pit type defects in the active region.

中文翻译：

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利用光子相关阴极发光光谱研究 InGaN/GaN 微型发光二极管的发射异质性


通过光谱分辨和时间相关阴极发光光谱研究了不同尺寸和形状的 InGaN/GaN μ-发光二极管 (LED) 的发射特性。这种方法提供了高空间和时间分辨率，使我们能够在单个 μ-LED 水平上同时测量 CL 光谱和载流子寿命。它还使我们能够研究单个 μ-LED 内以及跨多个设备的这些参数之间的相关性。我们的观察显示，相似尺寸的 μ-LED 之间的 CL 强度存在很大差异，特别是在最小的样品中。这种变化与发射波长的变化相关，并且归因于有源区域中的 V 坑型缺陷引起的样品之间的注入效率差异。