Achieving a High-Responsivity and Fast-Response-Speed Solar-Blind Photodetector for Underwater Optical Communication via AlGaN/AlN/GaN Heterojunction Nanowires,ACS Applied Electronic Materials

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Achieving a High-Responsivity and Fast-Response-Speed Solar-Blind Photodetector for Underwater Optical Communication via AlGaN/AlN/GaN Heterojunction Nanowires
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2024-05-22 , DOI: 10.1021/acsaelm.4c00636
Junjun Xue ₁ , Saisai Wang ₂ , Jiaming Tong ₁ , Guofeng Yang ₃ , Irina Parkhomenko ₄ , Fadei Komarov ₅ , Yu Liu ₆ , Qing Cai ₂ , Jin Wang ₁ , Ting Zhi ₁

Affiliation

Realizing energy-efficient devices with sustainable and independent operation is a large challenge for next-generation photodetection systems in various environments. In this study, we present a high-response and fast-speed ultraviolet photodetector (UV PD) based on the p-AlGaN/AlN/n-GaN nanowires (NWs) heterojunction, which could operate at a 0 V bias for underwater photodetection through the photoelectrochemical (PEC) process. Compared to the UV PD without AlN insertion, the detection performance would be increased to 3–5 times for underwater solar-blind UV detection under the effect of heterostructure band engineering to prevent carrier drift and recombination at 0 V bias under 255 nm illumination. Furthermore, the photoresponsivity and response speed can be further improved by a surface modification strategy to adjust the carrier transport between the nitride semiconductor and electrolyte. These promising results lay a solid foundation for the development of III-nitride high-efficiency, self-powered PEC photosynthesis devices in the future.

中文翻译：

通过 AlGaN/AlN/GaN 异质结纳米线实现用于水下光通信的高响应度和快速响应速度的日盲光电探测器

实现可持续且独立运行的节能设备是各种环境下的下一代光电检测系统面临的巨大挑战。在这项研究中，我们提出了一种基于 p-AlGaN/AlN/n-GaN 纳米线 (NW) 异质结的高分辨率和快速紫外光电探测器 (UV PD)，它可以在 0 V 偏压下工作，用于水下光电探测光电化学（PEC）过程。与没有插入AlN的UV PD相比，在异质结构能带工程的作用下，在255 nm照明下0 V偏压下防止载流子漂移和复合，水下日盲紫外检测的检测性能将提高3-5倍。此外，通过表面修饰策略调节氮化物半导体和电解质之间的载流子传输，可以进一步提高光响应性和响应速度。这些有希望的结果为未来开发III族氮化物高效自供电PEC光合作用装置奠定了坚实的基础。

更新日期：2024-05-22

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