Ferroelectricity in crystalline hafnium oxide has attracted considerable attention because of its potential application for memory devices. A recent breakthrough involves electric-field-induced crystallization, allowing HfO₂-based materials to avoid high-temperature crystallization, which is unexpected in the back-end-of-line process. However, due to the lack of clarity in understanding the mechanisms during the crystallization process, we aim to employ theoretical methods for simulation, to guide experimental endeavors. In this work, we extended our phase-field model by coupling the crystallization model and time-dependent Ginzburg-Landau equation to analyze the crystalline properties and the polarization evolution of Hf_0.5Zr_0.5O₂ thin film under applying an electric field periodic pulse. Through this approach, we found a wake-up effect during the process of crystallization and a transformation from orthorhombic nano-domains to the stripe domain. Furthermore, we have proposed an innovative artificial neural synapse concept based on the continuous polarization variation under applied electric field pulses. Our research lays the theoretical groundwork for the advancement of electric-field-induced crystallization in the hafnium oxide system.

晶体氧化铪中的铁电性由于其在存储器件中的潜在应用而引起了相当大的关注。最近的一项突破涉及电场诱导结晶，使 HfO ₂ 基材料能够避免高温结晶，这在后端工艺中是意想不到的。然而，由于对结晶过程中的机制缺乏清晰的理解，我们的目标是采用理论方法进行模拟，以指导实验工作。在这项工作中，我们通过耦合结晶模型和瞬态Ginzburg-Landau方程来扩展我们的相场模型，以分析Hf _0.5 Zr _0.5 的晶体特性和极化演化O ₂ 薄膜在施加电场周期脉冲下。通过这种方法，我们发现了结晶过程中的唤醒效应以及从正交纳米域到条纹域的转变。此外，我们提出了一种基于施加电场脉冲下连续极化变化的创新人工神经突触概念。我们的研究为氧化铪体系中电场诱导结晶的进步奠定了理论基础。