Spin logics have emerged as a promising avenue for the development of logic-in-memory architectures. In particular, the realization of XOR spin logic gates using a single spin–orbit torque device shows great potential for low-power stateful logic circuits in the next generation. In this study, we successfully obtained the XOR logic gate by utilizing a spin–orbit torque device with a lateral interface, which was created by local ion implantation in the Ta/Pt/Co/Ta Hall device exhibiting perpendicular magnetic anisotropy. The angle of the lateral interface is set at 45° relative to the current direction, leading to the competition between symmetry breaking and current-driven Néel-type domain wall motion. Consequently, the field-free magnetic switching reversed is realized by the same sign of current amplitude at this interface. Based on this field-free magnetic switching behavior, we successfully proposed an XOR logic gate that could be implemented using only a single spin–orbit torque Hall device. This study provides a potentially viable approach toward efficient spin logics and in-memory computing architectures.

Graphical abstract