The engineering of tin halide perovskites has led to the development of p-type transistors with field-effect mobilities of over 70 cm² V⁻¹ s⁻¹. However, due to their background hole doping, these perovskites are not suitable for n-type transistors. Ambipolar lead halide perovskites are potential candidates, but their defective nature limits electron mobilities to around 3–4 cm² V⁻¹ s⁻¹, which makes the development of all-perovskite logic circuits challenging. Here we report formamidinium lead iodide perovskite n-type transistors with field-effect mobilities of up to 33 cm² V⁻¹ s⁻¹ measured in continuous bias mode. This is achieved through strain relaxation of the perovskite lattice using a methylammonium chloride additive, followed by suppression of undercoordinated lead through tetramethylammonium fluoride multidentate anchoring. Our approach stabilizes the alpha phase, balances strain and improves surface morphology, crystallinity and orientation. It also enables low-defect perovskite–dielectric interfaces. We use the transistors to fabricate unipolar inverters and eleven-stage ring oscillators.

卤化锡钙钛矿的工程化导致了场效应迁移率超过70 cm ² V ^-1 s ^-1的p型晶体管的发展。然而，由于其背景空穴掺杂，这些钙钛矿不适合n型晶体管。双极性卤化铅钙钛矿是潜在的候选者，但其缺陷性质将电子迁移率限制在3-4 cm ² V ^-1 s ^-1左右，这使得全钙钛矿逻辑电路的开发具有挑战性。在这里，我们报告了甲脒碘化铅钙钛矿n型晶体管，在连续偏压模式下测得的场效应迁移率高达33 cm ² V ^-1 s ^-1 。这是通过使用甲基氯化铵添加剂使钙钛矿晶格应变弛豫，然后通过四甲基氟化铵多齿锚定抑制配位不足的铅来实现的。我们的方法可以稳定 α 相、平衡应变并改善表面形态、结晶度和取向。它还可以实现低缺陷的钙钛矿-介电界面。我们使用晶体管来制造单极逆变器和十一级环形振荡器。