This work introduces a groundbreaking MoS₂ phototransistor with exceptional detectivity and broad-spectrum response, achieved through the synergy of an HZO ferroelectric film and in situ-prepared Au nanoparticles (AuNPs). In situ prepared AuNPs enhance the ferroelectricity of the HZO film. The innovative approach involves inserting an Al₂O₃ layer between AuNPs/MoS₂. The Al₂O₃ layer reduces the off-state current, preserving the local surface plasmon resonance (LSPR) effect of AuNPs. The tensile strain induced by AuNPs in MoS₂ narrows its bandgap for broadband photodetection. Also, Al₂O₃ acts as a capacitance-matching layer, reducing subthreshold swing and enhancing detectivity through the negative capacitance (NC) effect of the ferroelectric HZO film. The NC-LSPR-coupled phototransistor demonstrates outstanding responsivity and detectivity at 528 nm (122.5 A/W, 3.23 × 10¹⁴ Jones) and 740 nm (28.3 A/W, 9.14 × 10¹³ Jones). This pioneering integration of NC and LSPR effects in 2D photodetectors paves the way for large-area phototransistor arrays with superior detection and broadband detection capabilities.

中文翻译：

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通过耦合负电容和局域表面等离子共振效应的高探测率和宽带 MoS2 光电晶体管阵列


这项工作介绍了一种突破性的 MoS ₂ 光电晶体管，它具有卓越的探测能力和广谱响应，是通过 HZO 铁电薄膜和原位制备的金纳米粒子 (AuNP) 的协同作用实现的。原位制备的 AuNPs 增强了 HZO 薄膜的铁电性。创新方法包括在 AuNPs/MoS ₂ 之间插入 Al ₂ O ₃ 层。 Al ₂ O ₃ 层降低了断态电流，保留了 AuNP 的局域表面等离子体共振 (LSPR) 效应。 MoS ₂ 中 AuNPs 引起的拉伸应变缩小了其带隙，以实现宽带光电探测。此外，Al ₂ O ₃ 充当电容匹配层，通过铁电 HZO 薄膜的负电容 (NC) 效应减少亚阈值摆幅并增强检测率。 NC-LSPR 耦合光电晶体管在 528 nm（122.5 A/W，3.23 × 10 ¹⁴ Jones）和 740 nm（28.3 A/W，9.14 × 10 ¹³ 琼斯）。二维光电探测器中数控和局域表面等离子体共振效应的开创性集成，为具有卓越探测和宽带探测能力的大面积光电晶体管阵列铺平了道路。