A single monolayer semiconductor integrated into a plasmonic tunnel junction exhibits electroluminescence with photon energies that exceed the excitation electron potential. This phenomenon is shown to be indirectly triggered by inelastically tunnelling electrons.

中文翻译：

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非弹性电子隧道效应引起异常光发射


集成到等离子体隧道结中的单个单层半导体表现出光子能量超过激发电子势的电致发光。这种现象被证明是由非弹性隧道电子间接触发的。