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Defining the Value of Injection Current and Effective Electrical Contact Area for EGaIn-Based Molecular Tunneling Junctions
Journal of the American Chemical Society ( IF 14.4 ) Pub Date : 2013-11-21 , DOI: 10.1021/ja408652h Felice C. Simeone 1 , Hyo Jae Yoon 1 , Martin M. Thuo 1 , Jabulani R. Barber 1 , Barbara Smith 1 , George M. Whitesides 1
Journal of the American Chemical Society ( IF 14.4 ) Pub Date : 2013-11-21 , DOI: 10.1021/ja408652h Felice C. Simeone 1 , Hyo Jae Yoon 1 , Martin M. Thuo 1 , Jabulani R. Barber 1 , Barbara Smith 1 , George M. Whitesides 1
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Analysis of rates of tunneling across self-assembled monolayers (SAMs) of n-alkanethiolates SCn (with n = number of carbon atoms) incorporated in junctions having structure Ag(TS)-SAM//Ga2O3/EGaIn leads to a value for the injection tunnel current density J0 (i.e., the current flowing through an ideal junction with n = 0) of 10(3.6±0.3) A·cm(-2) (V = +0.5 V). This estimation of J0 does not involve an extrapolation in length, because it was possible to measure current densities across SAMs over the range of lengths n = 1-18. This value of J0 is estimated under the assumption that values of the geometrical contact area equal the values of the effective electrical contact area. Detailed experimental analysis, however, indicates that the roughness of the Ga2O3 layer, and that of the Ag(TS)-SAM, determine values of the effective electrical contact area that are ~10(-4) the corresponding values of the geometrical contact area. Conversion of the values of geometrical contact area into the corresponding values of effective electrical contact area results in J0(+0.5 V) = 10(7.6±0.8) A·cm(-2), which is compatible with values reported for junctions using top-electrodes of evaporated Au, and graphene, and also comparable with values of J0 estimated from tunneling through single molecules. For these EGaIn-based junctions, the value of the tunneling decay factor β (β = 0.75 ± 0.02 Å(-1); β = 0.92 ± 0.02 nC(-1)) falls within the consensus range across different types of junctions (β = 0.73-0.89 Å(-1); β = 0.9-1.1 nC(-1)). A comparison of the characteristics of conical Ga2O3/EGaIn tips with the characteristics of other top-electrodes suggests that the EGaIn-based electrodes provide a particularly attractive technology for physical-organic studies of charge transport across SAMs.
中文翻译：
定义基于 EGaIn 的分子隧道结的注入电流值和有效电接触面积
对掺入具有 Ag(TS)-SAM//Ga2O3/EGaIn 结构的结中的 n-链烷硫醇盐 SCn（其中 n = 碳原子数）的自组装单层 (SAM) 的隧穿率进行分析，得出注入值隧道电流密度 J0（即流过 n = 0 的理想结的电流）为 10(3.6±0.3) A·cm(-2) (V = +0.5 V)。J0 的这种估计不涉及长度外推，因为可以在长度 n = 1-18 的范围内测量跨 SAM 的电流密度。J0 的这个值是在几何接触面积的值等于有效电接触面积的值的假设下估计的。然而，详细的实验分析表明 Ga2O3 层的粗糙度和 Ag(TS)-SAM 的粗糙度，确定有效电接触面积的值，该值是几何接触面积的相应值的 ~10(-4)。将几何接触面积值转换为相应的有效电接触面积值，结果 J0(+0.5 V) = 10(7.6±0.8) A·cm(-2)，这与使用 top 报告的结点值兼容- 蒸发的 Au 和石墨烯的电极，也与通过单分子隧穿估计的 J0 值相当。对于这些基于 EGaIn 的结，隧道衰减因子 β (β = 0.75 ± 0.02 Å(-1); β = 0.92 ± 0.02 nC(-1)) 的值落在不同类型结 (β = 0.73-0.89 Å(-1)；β = 0.9-1.1 nC(-1))。
更新日期：2013-11-21
中文翻译：
定义基于 EGaIn 的分子隧道结的注入电流值和有效电接触面积
对掺入具有 Ag(TS)-SAM//Ga2O3/EGaIn 结构的结中的 n-链烷硫醇盐 SCn（其中 n = 碳原子数）的自组装单层 (SAM) 的隧穿率进行分析，得出注入值隧道电流密度 J0（即流过 n = 0 的理想结的电流）为 10(3.6±0.3) A·cm(-2) (V = +0.5 V)。J0 的这种估计不涉及长度外推，因为可以在长度 n = 1-18 的范围内测量跨 SAM 的电流密度。J0 的这个值是在几何接触面积的值等于有效电接触面积的值的假设下估计的。然而，详细的实验分析表明 Ga2O3 层的粗糙度和 Ag(TS)-SAM 的粗糙度，确定有效电接触面积的值，该值是几何接触面积的相应值的 ~10(-4)。将几何接触面积值转换为相应的有效电接触面积值，结果 J0(+0.5 V) = 10(7.6±0.8) A·cm(-2)，这与使用 top 报告的结点值兼容- 蒸发的 Au 和石墨烯的电极，也与通过单分子隧穿估计的 J0 值相当。对于这些基于 EGaIn 的结，隧道衰减因子 β (β = 0.75 ± 0.02 Å(-1); β = 0.92 ± 0.02 nC(-1)) 的值落在不同类型结 (β = 0.73-0.89 Å(-1)；β = 0.9-1.1 nC(-1))。
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