Low dielectric photoinduced patterned materials have attracted extensive attention owing to their potential applications in integrated circuits and semiconductor devices. In this work, we synthesized a low dielectric polymer that can be used for photolithography. The monomer, 1-(4-vinylphenyl)-2-(4-benzocyclobutenyl)ethene (DVB-S-BCB), was synthesized from divinylbenzene (DVB) and 4-bromobenzocyclobutene (4-BrBCB) using the Heck reaction. Subsequently, P-DVB based on DVB-S-BCB was prepared by anionic polymerization. As the structure comprised thermally curable benzocyclobutene (BCB) groups and photocurable vinyl groups (UV/Thermal dual curing structure), P-DVB has been used for high-performance negative photosensitive resin with 2,6-bis(4-azidobenzylidene) cyclohexanone (BAC) as a photoinitiator. Photolithography was carried out using a 365-nm UV light source to obtain various patterns, and the research results indicate that photosensitive resins exhibit stable patterning processes at different curing stages. Besides, the cured P-DVB exhibited high thermal stability (T above 420 °C in N), low dielectric constant (2.55 at 10 MHz), low dielectric loss (1.56 × 10 at 10 MHz), and excellent mechanical performance. These properties make P-DVB a potential photoresist that can be widely used as interconnected dielectrics.

中文翻译：

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具有低 Dk 和高分辨率光成像介电性能的全烃苯并环丁烯树脂


低介电光致图案材料由于其在集成电路和半导体器件中的潜在应用而引起了广泛的关注。在这项工作中，我们合成了一种可用于光刻的低介电聚合物。采用 Heck 反应由二乙烯基苯 (DVB) 和 4-溴苯并环丁烯 (4-BrBCB) 合成单体 1-(4-乙烯基苯基)-2-(4-苯并环丁烯基)乙烯 (DVB-S-BCB)。随后，通过阴离子聚合制备了基于DVB-S-BCB的P-DVB。由于结构包含热固化苯并环丁烯（BCB）基团和光固化乙烯基（UV/热双固化结构），P-DVB已与2,6-双（4-叠氮苯亚甲基）环己酮一起用于高性能负性感光树脂（ BAC)作为光引发剂。使用365 nm紫外光源进行光刻以获得各种图案，研究结果表明光敏树脂在不同固化阶段表现出稳定的图案化过程。此外，固化后的 P-DVB 具有高热稳定性（N 中 T 高于 420 °C）、低介电常数（10 MHz 时为 2.55）、低介电损耗（10 MHz 时为 1.56 × 10）和优异的机械性能。这些特性使 P-DVB 成为一种潜在的光刻胶，可广泛用作互连电介质。