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Class-Φ2 Power Amplifier With Resonant Gate Driver: High-Efficiency Power Amplifier for 50 MHz
IEEE Microwave Magazine ( IF 3.7 ) Pub Date : 2024-05-08 , DOI: 10.1109/mmm.2024.3379028
Zhechi Ye 1 , Calvin H Lin 1 , Juan Rivas-Davila 1
Affiliation  

RF power amplifiers (PAs) serve an important role for various applications, such as communication, induction heating, plasma generation, and wireless power transfer [1] , [2] , [3] . With the current demands for energy conservation, the importance of high-efficiency PAs has been ever increasing. Efficient power delivery alleviates the burden of thermal management, improving the system stability and increasing the power density. In this article, we present our first-place design for the Student Design Competition “High-Efficiency Power Amplifier for 50 MHz” in the 2023 IEEE International Microwave Symposium (IMS) in San Diego, CA, USA.

中文翻译:

具有谐振栅极驱动器的 Φ2 类功率放大器:50 MHz 高效功率放大器

射频功率放大器 (PA) 在通信、感应加热、等离子体生成和无线电力传输等各种应用中发挥着重要作用[1] ,[2] ,[3] 。随着当前节能减排的要求,高效功率放大器的重要性日益凸显。高效的电力传输减轻了热管理的负担,提高了系统稳定性并增加了功率密度。在本文中,我们展示了在美国加利福尼亚州圣地亚哥举行的 2023 年 IEEE 国际微波研讨会 (IMS) 学生设计竞赛“50 MHz 高效功率放大器”中获得第一名的设计。
更新日期:2024-05-08
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