In this article, a mode-switching oscillator using multi-magnetic-coupling and active-source-degenerating techniques is proposed to achieve wide frequency tuning and low phase noise. The multi-magnetic coupled resonator can realize two switchable resonant frequencies and perform active source degeneration. Two main coils are developed to switch between the two resonant modes, thereby doubling the frequency tuning range (TR) without degrading the phase noise performance. The effective noise power from the active device is suppressed by an additional coupling between the primary and secondary coils via active source degeneration. Moreover, the strong coupling between the primary and secondary coils can boost the equivalent quality factor of the inductance part of the tank at both switchable modes. Thus, both the reduction of phase noise and the extension of the TR are achieved. Fabricated in a 40-nm CMOS process, the proposed oscillator exhibits frequency tuning from 2.88 to 5.87 GHz while consuming 20.5 to 27.9 mW power dissipation. The phase noise at 2.88 GHz oscillation frequency is -135.8 dBc/Hz at 1-MHz offset, corresponding to a figure-of-merit (FoM) of 191.5 dBc/Hz and FoMT of 208.2 dBc/Hz. The 1/ $\mathbf {f}^{3}$ phase noise corner is 68–234 kHz over the 68.3% TR.

中文翻译：

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采用多磁耦合和有源简并技术的低相位噪声宽调谐范围模式切换振荡器


在本文中，提出了一种使用多磁耦合和有源源简并技术的模式切换振荡器，以实现宽频率调谐和低相位噪声。该多磁耦合谐振器可以实现两个可切换的谐振频率并进行主动源简并。开发了两个主线圈来在两种谐振模式之间切换，从而使频率调谐范围 (TR) 加倍，而不会降低相位噪声性能。来自有源器件的有效噪声功率通过有源源退化通过初级线圈和次级线圈之间的附加耦合来抑制。此外，初级线圈和次级线圈之间的强耦合可以提高两种可切换模式下谐振回路的电感部分的等效品质因数。这样，就实现了相位噪声的降低和TR的延长。该振荡器采用 40 nm CMOS 工艺制造，频率可调范围为 2.88 至 5.87 GHz，同时功耗为 20.5 至 27.9 mW。 2.88 GHz 振荡频率下的相位噪声在 1 MHz 偏移时为 -135.8 dBc/Hz，对应于 191.5 dBc/Hz 的品质因数 (FoM) 和 208.2 dBc/Hz 的 FoMT。 1/ $\mathbf {f}^{3}$在 68.3% TR 上，相位噪声角为 68–234 kHz。