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Indirect evidence of Bi3+ valence change and dual role of Bi3+ in trapping electrons and holes for multimode X-ray imaging, anti-counterfeiting, and non-real-time force sensing
Acta Materialia ( IF 8.3 ) Pub Date : 2024-04-22 , DOI: 10.1016/j.actamat.2024.119953
Tianshuai Lyu , Pieter Dorenbos , Zhanhua Wei

Discovering bismuth based smart materials that can respond to thermal, mechanical, and wide range X-ray to infrared photon excitation remains a challenge. Such materials have various uses like in advanced information encryption. In this work, valence state change between Bi, Bi, and Bi, and the dual role of Bi in trapping electrons and holes have been studied in Bi or/and Ln (Ln=Tb or Pr) doped LiScGeO family of compounds by vacuum referred binding energy (VRBE) diagram construction, thermoluminescence, and spectroscopy. Electron release from Bi has been evidenced. It can be used to experimentally determine the VRBE in the BiP ground state and to realize Bi negative quenching luminescence. Particularly, a new force induced charge carrier storage phenomenon has been discovered for non-real-time force recording. Wide range of emission tailorable afterglow, unique Bi ultraviolet-A, white, and infrared afterglow have been demonstrated by using Bi as a hole trapping and recombination center and using energy transfer processes from Bi to Tb, Pr, Dy, or Cr. Proof-of-concept advanced anti-counterfeiting, information encryption, and X-ray imaging will be demonstrated. This work not only develops smart storage phosphors, but more importantly unravels the valence change between Bi, Bi, or Bi and how it can affect the trapping and release of charge carriers with thermal, optical, or mechanical excitation. This work therefore can promote the discovery and development of Bi based smart materials for various applications.

中文翻译:


Bi3+ 价态变化的间接证据以及 Bi3+ 在捕获电子和空穴以用于多模式 X 射线成像、防伪和非实时力传感中的双重作用



发现能够响应热、机械和宽范围 X 射线到红外光子激发的铋基智能材料仍然是一个挑战。此类材料具有多种用途,例如高级信息加密。在这项工作中,通过真空参考,研究了 Bi 或/和 Ln (Ln=Tb 或 Pr) 掺杂 LiScGeO 系列化合物中 Bi、Bi 和 Bi 之间的价态变化以及 Bi 在捕获电子和空穴中的双重作用。结合能 (VRBE) 图构建、热释光和光谱。 Bi 的电子释放已得到证实。它可用于实验确定BiP基态的VRBE并实现Bi负猝灭发光。特别是,已经发现了一种用于非实时力记录的新的力感应电荷载流子存储现象。通过使用Bi作为空穴捕获和复合中心并使用从Bi到Tb、Pr、Dy或Cr的能量转移过程,已经证明了宽范围的发射可定制余辉、独特的Bi紫外-A、白光和红外余辉。将展示先进的防伪、信息加密和 X 射线成像的概念验证。这项工作不仅开发了智能存储荧光粉,更重要的是揭示了 Bi、Bi 或 Bi 之间的价态变化,以及它如何通过热、光或机械激发影响电荷载流子的捕获和释放。因此,这项工作可以促进铋基智能材料的各种应用的发现和开发。
更新日期:2024-04-22
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