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Behavior of Microstrain in Nd3+-Sensitized Near-Infrared Upconverting Core–Shell Nanocrystals for Defect-Induced Tailoring of Luminescence Intensity
Nano Letters ( IF 9.6 ) Pub Date : 2024-05-03 , DOI: 10.1021/acs.nanolett.4c01077 Panchanan Pandey 1 , Shilpa Tripathi 2, 3 , Manvendra Narayan Singh 4 , Rajendra Kumar Sharma 5 , Supratim Giri 1, 6
Nano Letters ( IF 9.6 ) Pub Date : 2024-05-03 , DOI: 10.1021/acs.nanolett.4c01077 Panchanan Pandey 1 , Shilpa Tripathi 2, 3 , Manvendra Narayan Singh 4 , Rajendra Kumar Sharma 5 , Supratim Giri 1, 6
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In an attempt to optimize the upconversion luminescence (UCL) output of a Nd3+-sensitized near-infrared (808 nm) upconverting core–shell (CS) nanocrystal through deliberate incorporation of lattice defects, a comprehensive analysis of microstrain both at the CS interface and within the core layer was performed using integral breadth calculation of high-energy synchrotron X-ray (λ = 0.568551 Å) diffraction. An atomic level interpretation of such microstrain was performed using pair distribution function analysis of the high-energy total scattering. The core NC developed compressive microstrain, which gradually transformed into tensile microstrain with the growth of the epitaxial shell. Such a reversal was rationalized in terms of a consistent negative lattice mismatch. Upon introduction of lattice defects into the CS systems upon incorporation of Li+, the corresponding UCL intensity was maximized at some specific Li+ incorporation, where the tensile microstrain of CS, compressive microstrain of the core, and atomic level disorders exhibited their respective extreme values irrespective of the activator ions.
中文翻译：
Nd3+ 敏化近红外上转换核壳纳米晶体中微应变的行为，用于缺陷诱导发光强度的定制
为了通过故意掺入晶格缺陷来优化 Nd 3+敏化近红外（808 nm）上转换核壳（CS）纳米晶体的上转换发光（UCL）输出，对 CS 处的微应变进行了全面分析使用高能同步加速器 X 射线（λ = 0.568551 Å）衍射的积分宽度计算来进行界面和核心层内的分析。使用高能总散射的配对分布函数分析对这种微应变进行原子级解释。核心NC产生压缩微应变，随着外延壳的生长逐渐转变为拉伸微应变。这种逆转可以通过一致的负晶格失配来合理化。在掺入Li +后将晶格缺陷引入CS系统中，相应的UCL强度在某些特定的Li +掺入下最大化，其中CS的拉伸微应变、核心的压缩微应变和原子级紊乱表现出各自的极值与活化剂离子无关。
更新日期：2024-05-03
中文翻译：
Nd3+ 敏化近红外上转换核壳纳米晶体中微应变的行为，用于缺陷诱导发光强度的定制
为了通过故意掺入晶格缺陷来优化 Nd 3+敏化近红外（808 nm）上转换核壳（CS）纳米晶体的上转换发光（UCL）输出，对 CS 处的微应变进行了全面分析使用高能同步加速器 X 射线（λ = 0.568551 Å）衍射的积分宽度计算来进行界面和核心层内的分析。使用高能总散射的配对分布函数分析对这种微应变进行原子级解释。核心NC产生压缩微应变，随着外延壳的生长逐渐转变为拉伸微应变。这种逆转可以通过一致的负晶格失配来合理化。在掺入Li +后将晶格缺陷引入CS系统中，相应的UCL强度在某些特定的Li +掺入下最大化，其中CS的拉伸微应变、核心的压缩微应变和原子级紊乱表现出各自的极值与活化剂离子无关。
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