<br>用于 2D 电子学的范德华外延生长分子晶体电介质 Sb2O3,ACS Nano

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用于 2D 电子学的范德华外延生长分子晶体电介质 Sb2O3
ACS Nano ( IF 15.8 ) Pub Date : 2024-05-04 , DOI: 10.1021/acsnano.4c01883
Huije Ryu ₁ , Hyunjun Kim ₁ , Jae Hwan Jeong ₁ , Byeong Chan Kim ₁ , Kenji Watanabe ₂ , Takashi Taniguchi ₃ , Gwan-Hyoung Lee ₁

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二维（2D）半导体材料由于其在原子层厚度下的高迁移率和栅极可调性，作为沟道材料的有希望的候选者引起了人们的极大兴趣。然而，由于难以形成具有清洁且无损界面的高质量电介质，二维电子学的发展受到阻碍。在这里，我们报告了通过物理气相沉积在二维材料上直接范德华外延生长分子晶体电介质 Sb ₂ O ₃ 。生长的 Sb ₂ O ₃纳米片与 2D 模板表现出 0 和 180° 的外延关系，保持了高结晶度以及与 2D 材料的超锐 vdW 界面。结果，Sb ₂ O ₃纳米片在厚度为1.3 nm的2L Sb ₂ O ₃中表现出18.6 MV/cm的高击穿电场，在3L中表现出2.47 × 10 ^–7 A/cm ²的极低漏电流。 Sb ₂ O ₃ ，厚度为1.96 nm。我们还观察到两种类型的晶界 (GB)，其取向角分别为 0 和 60°。具有良好缝合边界的 0°-GB 显示出比具有无序边界的 60°-GB 更高的电稳定性和热稳定性。我们的工作展示了一种在二维材料上外延生长分子晶体电介质而不造成任何损坏的方法，这是高性能二维电子产品的要求。

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Van der Waals Epitaxially Grown Molecular Crystal Dielectric Sb2O3 for 2D Electronics

Two-dimensional (2D) semiconducting materials have attracted significant interest as promising candidates for channel materials owing to their high mobility and gate tunability at atomic-layer thickness. However, the development of 2D electronics is impeded due to the difficulty in formation of high-quality dielectrics with a clean and nondestructive interface. Here, we report the direct van der Waals epitaxial growth of a molecular crystal dielectric, Sb₂O₃, on 2D materials by physical vapor deposition. The grown Sb₂O₃ nanosheets showed epitaxial relations of 0 and 180° with the 2D template, maintaining high crystallinity and an ultrasharp vdW interface with the 2D materials. As a result, the Sb₂O₃ nanosheets exhibited a high breakdown field of 18.6 MV/cm for 2L Sb₂O₃ with a thickness of 1.3 nm and a very low leakage current of 2.47 × 10^–7 A/cm² for 3L Sb₂O₃ with a thickness of 1.96 nm. We also observed two types of grain boundaries (GBs) with misorientation angles of 0 and 60°. The 0°-GB with a well-stitched boundary showed higher electrical and thermal stabilities than those of the 60°-GB with a disordered boundary. Our work demonstrates a method to epitaxially grow molecular crystal dielectrics on 2D materials without causing any damage, a requirement for high-performance 2D electronics.

更新日期：2024-05-04

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