The current study focuses on the synthesis and other detailed studies on CaBi₂Nb₂O₉ (abbreviated CBNO) phosphor doped with Dy³⁺ ions. The aforementioned phosphors were prepared via a solid-state reaction procedure and a comprehensive analysis of the crystal structure, particle morphology, vibrational bands, luminous characteristics, decay and thermal stability of the phosphors was done. Phase identification of the synthesized material was carried out using X-ray diffraction (XRD) technique and the optical bandgap was determined using diffuse reflectance spectra (DRS). The morphological studies and particle size estimation of the phosphor material were conducted using a scanning electron microscope (SEM). Under 452 nm excitation, the photoluminescence (PL) spectra of Dy³⁺-doped CBNO phosphor exhibit three peaks at 482, 576, and 666 nm, which correspond to the transitions ⁴F_9/2 → ⁶H_15/2, ⁶H_13/2, and ⁶H_11/2. The electric dipole–dipole interaction was the main mechanism for concentration quenching for Dy³⁺ ions. The estimated CIE chromaticity coordinates for Dy³⁺ ion-doped CBNO phosphors fall in the white region. The temperature-dependent PL (TD-PL) findings reveals that CBNO phosphors have a considerably superior thermal stability. The results of these investigations suggest that the CBNO phosphors doped with Dy³⁺ ions exhibit promising properties that could be used for prospective w-LEDs and other optoelectronic device applications.

目前的研究重点是掺杂Dy ^{3+离子的CaBi} ₂ Nb ₂ O ₉ (简称CBNO)荧光粉的合成和其他详细研究。通过固相反应过程制备了上述荧光粉，并对荧光粉的晶体结构、颗粒形貌、振动谱带、发光特性、衰变和热稳定性进行了综合分析。使用X射线衍射（XRD）技术对合成材料进行相鉴定，并使用漫反射光谱（DRS）确定光学带隙。使用扫描电子显微镜（SEM）进行荧光材料的形态研究和粒度估计。在452 nm激发下，Dy ³⁺掺杂的CBNO荧光粉的光致发光（PL）光谱在482、576和666 nm处表现出三个峰，分别对应于⁴ F _9/2  →  ⁶ H _15/2、⁶ H跃迁_13/2和⁶ H _11/2。电偶极-偶极相互作用是 Dy ³⁺离子浓度猝灭的主要机制。 Dy ³⁺离子掺杂的 CBNO 磷光体的估计 CIE 色度坐标落在白色区域。温度依赖性 PL (TD-PL) 研究结果表明 CBNO 荧光粉具有相当优异的热稳定性。这些研究结果表明，掺杂 Dy ³⁺离子的 CBNO 荧光粉表现出有前景的特性，可用于未来的 w-LED 和其他光电器件应用。