The power and temperature characteristics of Ø200 µm half-disk microlasers with a half-ring metal contact and high-density InGaAs/GaAs quantum dots are studied. In a continuous wave (CW) mode, the maximal optical power at 20°C was 134 mW, and the maximal CW lasing temperature reached 113°C. In a pulsed regime the maximal optical power of 1.6 W, limited by catastrophic degradation, was achieved. By comparing the CW and pulsed current–voltage characteristics, the dependence of a microlaser temperature on CW pumping current was determined. At CW currents corresponding to the maximal wall-plug efficiency, the maximal optical power, and complete lasing quenching, the laser temperatures were 60, 99, and 149°C, respectively.

中文翻译：

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改进半盘二极管微型激光器的功率和温度性能

研究了具有半环金属接触和高密度InGaAs/GaAs量子点的Ø200 µm半盘微型激光器的功率和温度特性。在连续波（CW）模式下，20°C时的最大光功率为134 mW，最大CW激光温度达到113°C。在脉冲状态下，由于灾难性退化的限制，最大光功率达到了 1.6 W。通过比较连续波和脉冲电流-电压特性，确定了微激光器温度对连续波泵浦电流的依赖性。在对应于最大电光转换效率、最大光功率和完全激光淬灭的连续波电流下，激光器温度分别为 60、99 和 149°C。