In order to fulfill the urgent requirements of functional products, circuit integration of different functional devices are commonly utilized. Thus, issues including production cycle, cost, and circuit crosstalk will get serious. Neuromorphic computing aims to break through the bottle neck of von Neumann architectures. Electronic devices with multi-operation modes, especially neuromorphic devices with multi-mode cognitive activities, would provide interesting solutions. Here, pectin/chitosan hybrid electrolyte gated oxide neuromorphic transistor was fabricated. With extremely strong proton related interfacial electric-double-layer coupling, the device can operate at low voltage of below 1 V. The device can also operate at multi-operation mode, including bottom gate mode, coplanar gate and pseudo-diode mode. Interestingly, the artificial synapse can work at low voltage of only 1 mV, exhibiting extremely low energy consumption of ∼7.8 fJ, good signal-to-noise ratio of ∼229.6 and sensitivity of ∼23.6 dB. Both inhibitory and excitatory synaptic responses were mimicked on the pseudo-diode, demonstrating spike rate dependent plasticity activities. Remarkably, a linear classifier is proposed on the oxide neuromorphic transistor under synaptic metaplasticity mechanism. These results suggest great potentials of the oxide neuromorphic devices with multi-mode cognitive activities in neuromorphic platform.

为了满足功能产品的迫切需求，通常采用不同功能器件的电路集成。因此，生产周期、成本和电路串扰等问题将变得严重。神经形态计算旨在突破冯诺依曼架构的瓶颈。具有多操作模式的电子设备，特别是具有多模式认知活动的神经形态设备，将提供有趣的解决方案。在这里，制造了果胶/壳聚糖混合电解质门控氧化物神经形态晶体管。该器件具有极强的质子相关界面双电层耦合，可以在低于1 V的低电压下工作。该器件还可以在多种工作模式下工作，包括底栅模式、共面栅极和伪二极管模式。有趣的是，人工突触可以在仅1 mV的低电压下工作，表现出~7.8 fJ的极低能耗、~229.6的良好信噪比和~23.6 dB的灵敏度。在伪二极管上模拟了抑制性和兴奋性突触反应，证明了尖峰速率依赖性可塑性活动。值得注意的是，在突触化塑性机制下，在氧化物神经形态晶体管上提出了线性分类器。这些结果表明，具有多模式认知活动的氧化物神经形态器件在神经形态平台中具有巨大的潜力。