使用多种电子传输材料的无机无铅CsSnBr3钙钛矿太阳能电池的优化和性能分析,Energy & Fuels

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使用多种电子传输材料的无机无铅CsSnBr3钙钛矿太阳能电池的优化和性能分析
Energy & Fuels ( IF 5.2 ) Pub Date : 2024-04-19 , DOI: 10.1021/acs.energyfuels.4c00953
Shazia Akhtar Dar ₁ , Brajendra Singh Sengar ₁

Affiliation

钙钛矿太阳能电池（PSC）的功率转换效率在短时间内迅速提高，带来了与铅（Pb）相关的不稳定性和毒性相关的挑战，阻碍了其商业可行性的进展。为此，对无铅替代品（例如 CsSnBr ₃）的探索引起了广泛的研究关注。 CsSnBr ₃因其经济性、强大的稳定性和令人印象深刻的效率而成为太阳能电池技术中吸收层角色的极具前景的竞争者。在本研究中，采用CsSnBr _{3作为吸收层，Cu}₂ O作为空穴传输层(HTL)，TiO ₂、PCBM、WS ₂、ZnO、SnO ₂和IGZO作为电子传输层(ETL)。这项工作的重点是使用 SCAPS-1D 数值模拟增强 CsSnBr ₃基 PSC的光伏 (PV) 性能参数。这是通过优化光吸收层、ETL 和 HTL 的特性（厚度、掺杂和缺陷密度）来实现的。此外，还研究了掺杂和缺陷密度（ N _{t ）对CsSnBr}₃ /ETL和HTL/CsSnBr ₃界面处PV性能的影响。器件架构的性能受到吸收层厚度、受主密度、缺陷密度以及各种 ETL 和 HTL 组合的显着影响。采用TiO ₂、PCBM、WS ₂、ZnO、SnO ₂和IGZO ETL 的优化器件的PCE 分别为21.64、21.94、22.43、21.94、21.94 和21.88%。此外，该研究还包括六种优化器件的电容效应说明和莫特-肖特基 (M-S) 分析，并辅以相应J - V和 QE 特性的计算。然后将通过彻底分析获得的光伏性能与之前发表的基于 CsSnBr ₃的 PSC 的理论和实验结果进行比较。使用 wxAMPS 仿真工具对排名前六的器件的性能进行了验证和比较。通过采用各种分析技术和理论模拟，开发了一种优化的配置，使用任意模拟方法对掺铟锡氧化物/TiO ₂ /CsSnBr ₃ /Cu ₂实现了迄今为止报道的最高效率 22.43% O/Au 配置。

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Optimization and Performance Analysis of Inorganic Lead-Free CsSnBr3 Perovskite Solar Cells Using Diverse Electron Transport Materials

The rapid enhancement in the power conversion efficiency of perovskite solar cells (PSCs) within a short time frame has introduced challenges related to the instability and toxicity linked with lead (Pb), impeding their progress toward commercial viability. In response, the exploration of Pb-free alternatives, such as CsSnBr₃, has garnered substantial research attention. CsSnBr₃ stands out as a highly promising contender for fulfilling the role of an absorber layer in solar cell technology, distinguished by its economical nature, robust stability, and impressive efficiency. In this study, CsSnBr₃ is employed as an absorber layer, Cu₂O as the hole transport layer (HTL), and TiO₂, PCBM, WS₂, ZnO, SnO₂, and IGZO as electron transport layers (ETLs). This work focuses on enhancing the photovoltaic (PV) performance parameters of CsSnBr₃-based PSCs using SCAPS-1D numerical simulation. This is achieved by optimizing characteristics (thickness, doping, and defect density) of the light absorber layer, ETLs, and HTL. Additionally, the effects of doping and defect density (N_t) on the PV performance at CsSnBr₃/ETL and HTL/CsSnBr₃ interfaces are investigated. The device architecture’s performance was significantly influenced by the absorber layer’s thickness, acceptor density, defect density, and the combination of various ETLs and HTLs. Optimized devices employing TiO₂, PCBM, WS₂, ZnO, SnO₂, and IGZO ETLs exhibited PCEs of 21.64, 21.94, 22.43, 21.94, 21.94, and 21.88%, respectively. Moreover, the study included the illustration of capacitance effects and Mott–Schottky (M–S) analysis for the six optimized devices, complemented by the computation of corresponding J–V and QE characteristics. The PV performance obtained from this thorough analysis is then compared with previously published theoretical and experimental results for CsSnBr₃-based PSCs. The performance of the top six devices is validated and compared using the wxAMPS simulation tool. By employing a variety of analytical techniques and theoretical simulations, an optimized configuration is developed, leading to the achievement of the highest reported efficiency to date at 22.43% using any simulation method for indium-doped tin oxide/TiO₂/CsSnBr₃/Cu₂O/Au configuration.

更新日期：2024-04-19

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