Zinc gallium oxide (ZnGa₂O₄) has attracted considerable interest in deep-ultraviolet photodetectors, due to the ultrawide bandgap, high transmittance in the ultraviolet (UV) region, and excellent environmental stability. In this study, ZnGa₂O₄ thin films were deposited on p-GaN epi-layers using pulsed laser deposition, resulting in improved crystalline quality. The ZnGa₂O₄ film exhibited a bandgap of 4.93 eV, calculated through absorption spectra. A heterojunction photodetector (PD) was constructed, demonstrating a rectification effect, an on/off ratio of 12,697 at −5.87 V, a peak responsivity of 14.5 mA/W, and a peak detectivity of 1.14 × 10¹² Jones (262 nm, −6 V). The PD exhibited a fast response time (39 ms) and recovery time (30 ms) under 262 nm illumination. The band diagram based on the Anderson model elucidates the photoresponse and carrier transport mechanism. This work paves the way for advancing next-generation optoelectronics.

中文翻译：

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脉冲激光沉积制备的深紫外n-ZnGa2O4/p-GaN异质结光电探测器

氧化锌镓（ZnGa ₂ O ₄）由于超宽带隙、紫外（UV）区域的高透过率和优异的环境稳定性而引起了深紫外光电探测器的广泛关注。在这项研究中，使用脉冲激光沉积将 ZnGa ₂ O ₄薄膜沉积在 p-GaN 外延层上，从而提高了晶体质量。通过吸收光谱计算， ZnGa ₂ O ₄薄膜的带隙为4.93 eV。构建了异质结光电探测器（PD），展示了整流效应，-5.87 V 下的开/关比为 12,697，峰值响应率为 14.5 mA/W，峰值检测率为 1.14 × 10 ¹² Jones（262 nm，- 6V）。 PD 在 262 nm 照明下表现出快速响应时间 (39 ms) 和恢复时间 (30 ms)。基于安德森模型的能带图阐明了光响应和载流子传输机制。这项工作为推进下一代光电子学铺平了道路。