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Reply to: Safe practices for mobility evaluation in field-effect transistors and Hall effect measurements using emerging materials
Nature Electronics ( IF 33.7 ) Pub Date : 2024-04-17 , DOI: 10.1038/s41928-024-01155-7 Ao Liu , Huihui Zhu , Yong-Young Noh
中文翻译：
回复：使用新兴材料进行场效应晶体管迁移率评估和霍尔效应测量的安全实践
更新日期：2024-04-17
Nature Electronics ( IF 33.7 ) Pub Date : 2024-04-17 , DOI: 10.1038/s41928-024-01155-7 Ao Liu , Huihui Zhu , Yong-Young Noh
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replying to: V. Bruevich & V. Podzorov. Nature Electronics https://doi.org/10.1038/s41928-024-01154-8 (2024)
In response to our recent Article1, Bruevich and Podzorov2 raised concerns regarding the extraction of mobility from our perovskite thin-film transistor (TFT) transfer curves, potential Joule effects in our TFTs, and the differences between the estimated Hall and TFT hole concentration/mobility. Here we provide a response and additional details about our work.
中文翻译：
回复：使用新兴材料进行场效应晶体管迁移率评估和霍尔效应测量的安全实践
回复：V. Bruevich 和 V. Podzorov。自然电子https://doi.org/10.1038/s41928-024-01154-8 (2024)
为了回应我们最近的第1篇文章，Bruevich 和 Podzorov 2对从钙钛矿薄膜晶体管 (TFT) 传输曲线中提取迁移率、TFT 中潜在的焦耳效应以及估计的霍尔和 TFT 空穴浓度之间的差异提出了担忧/流动性。我们在此提供回应以及有关我们工作的其他详细信息。
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