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Self-Powered Photodetectors with Nickel-Doped ZnO Nanorods for Operation in Low-Light Environments
ACS Applied Nano Materials ( IF 5.3 ) Pub Date : 2024-04-17 , DOI: 10.1021/acsanm.4c00725 Arbacheena Bora 1, 2 , Jeena George 1 , Yuvaraj Sivalingam 1, 3 , Surya Velappa Jayaraman 1, 4 , Gabriele Magna 5 , Mangalampalli S. R. N. Kiran 1 , Luigi Vesce 2, 6 , Roberto Paolesse 5 , Corrado Di Natale 2
ACS Applied Nano Materials ( IF 5.3 ) Pub Date : 2024-04-17 , DOI: 10.1021/acsanm.4c00725 Arbacheena Bora 1, 2 , Jeena George 1 , Yuvaraj Sivalingam 1, 3 , Surya Velappa Jayaraman 1, 4 , Gabriele Magna 5 , Mangalampalli S. R. N. Kiran 1 , Luigi Vesce 2, 6 , Roberto Paolesse 5 , Corrado Di Natale 2
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The development of next-generation optoelectronic devices relies on the necessity for self-powered, fast, and high-sensitivity photodetectors with a wide-spectral response. This Article investigates the impact of nickel doping on the growth of ZnO nanorods (79–123 nm diameter) on a p-type silicon substrate, exploring alterations in photovoltaic characteristics compared to the pure counterparts. The results reveal enhanced performances in devices with nickel doping ranging from 1% to 5%, exhibiting superior behavior across tested parameters. Despite consistent morphology and geometric aspects of the grown nanorods, the persistent presence of nickel was evident. Illumination from UV and visible light sources demonstrated increased current in I–V plots with rising doping levels, showcasing robust photovoltaic behavior at 0 V and enabling functionality as a self-powered photodetector. Under UV light, self-powered operation was observed at an intensity as low as 20 mW/cm2, extending beyond 50 mW/cm2 for visible light exposure. These devices exhibit applicability in detecting a broad spectrum of solar radiation, as evidenced by the influence of the wavelength and light intensity on the photocurrent response at zero bias. With pulsed frequencies of a 405 nm laser, changes in the photocurrent were observed with variations in operating frequency. Hence, a high-performance, wide spectral, self-powered photodetector capable of detecting minimal light intensity was fabricated.
中文翻译：
采用镍掺杂 ZnO 纳米棒的自供电光电探测器，适用于低光环境
下一代光电器件的发展依赖于具有宽光谱响应的自供电、快速、高灵敏度光电探测器的必要性。本文研究了镍掺杂对 p 型硅基板上 ZnO 纳米棒（直径 79-123 nm）生长的影响，探索与纯对应物相比光伏特性的变化。结果表明，镍掺杂量为 1% 至 5% 的器件性能得到增强，在测试参数中表现出优异的性能。尽管生长的纳米棒的形态和几何形状一致，但镍的持续存在是显而易见的。紫外和可见光源的照明表明，随着掺杂水平的增加， I-V图中的电流增加，展示了 0 V 下强大的光伏行为，并实现了自供电光电探测器的功能。在紫外光下，在低至 20 mW/cm 2的强度下观察到自供电操作，对于可见光暴露，强度超过 50 mW/cm 2 。这些器件在检测广谱太阳辐射方面表现出适用性，零偏压下波长和光强度对光电流响应的影响证明了这一点。使用 405 nm 激光的脉冲频率，观察到光电流随工作频率的变化而变化。因此，制造了一种能够检测最小光强度的高性能、宽光谱、自供电光电探测器。
更新日期：2024-04-17
中文翻译：
采用镍掺杂 ZnO 纳米棒的自供电光电探测器，适用于低光环境
下一代光电器件的发展依赖于具有宽光谱响应的自供电、快速、高灵敏度光电探测器的必要性。本文研究了镍掺杂对 p 型硅基板上 ZnO 纳米棒（直径 79-123 nm）生长的影响，探索与纯对应物相比光伏特性的变化。结果表明，镍掺杂量为 1% 至 5% 的器件性能得到增强，在测试参数中表现出优异的性能。尽管生长的纳米棒的形态和几何形状一致，但镍的持续存在是显而易见的。紫外和可见光源的照明表明，随着掺杂水平的增加， I-V图中的电流增加，展示了 0 V 下强大的光伏行为，并实现了自供电光电探测器的功能。在紫外光下，在低至 20 mW/cm 2的强度下观察到自供电操作，对于可见光暴露，强度超过 50 mW/cm 2 。这些器件在检测广谱太阳辐射方面表现出适用性，零偏压下波长和光强度对光电流响应的影响证明了这一点。使用 405 nm 激光的脉冲频率，观察到光电流随工作频率的变化而变化。因此，制造了一种能够检测最小光强度的高性能、宽光谱、自供电光电探测器。
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