A millimeter (mm)-wave widely-tunable mixer-first noise-cancelling receiver is demonstrated in 130-nm SiGe BiCMOS. The receiver simultaneously achieves 8.9–9.7-dBm out-of-band (OOB) B1dB and 8.55–10.9-dB NF across a 20–40-GHz operating range, enabled by four techniques highlighted in this article: 1) a dual-resonant-mode local oscillator (LO) buffer for lower power, higher frequency non-overlapping pulse generation; 2) wide-frequency-tunable quadrature generation; 3) linear periodic time-varying (LPTV) feedback technique to enable impedance transparency in HBT N-path mixers with a minimum noise penalty; and 4) an adapted noise-cancellation architecture for reducing the effect of LO noise mechanisms on the overall receiver noise figure in HBT-based N-path receivers. The presented techniques are supported by theoretical analyses, a discussion of critical layout considerations, and measurements from an integrated prototype. While we demonstrate these techniques for SiGe HBTs, they are applicable to other HBT technologies (i.e., InP) and may be generalized to FET/HEMT technologies operated in an active mode.

中文翻译：

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具有双谐振模式 LO 驱动的高动态范围 HBT N 路径接收器的设计


在 130 nm SiGe BiCMOS 中演示了毫米波宽可调混频器优先的噪声消除接收器。该接收器在 20–40 GHz 工作范围内同时实现 8.9–9.7 dBm 带外 (OOB) B1dB 和 8.55–10.9 dB NF，这由本文重点介绍的四种技术实现：1) 双谐振- 模式本地振荡器 (LO) 缓冲器，用于产生更低功耗、更高频率的非重叠脉冲； 2）宽频可调正交产生； 3) 线性周期时变 (LPTV) 反馈技术，可在 HBT N 路混频器中实现阻抗透明，同时将噪声损失降至最低； 4) 一种适应的噪声消除架构，用于减少 LO 噪声机制对基于 HBT 的 N 路径接收器中整体接收器噪声系数的影响。所提出的技术得到理论分析、关键布局考虑因素的讨论以及集成原型的测量的支持。虽然我们针对 SiGe HBT 演示了这些技术，但它们也适用于其他 HBT 技术（即 InP），并且可以推广到在有源模式下运行的 FET/HEMT 技术。