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A Single-Stage Bipolar-Output Regulating Rectifier With Negligible Cross-Regulation for Wireless Display
IEEE Journal of Solid-State Circuits ( IF 4.6 ) Pub Date : 2024-04-11 , DOI: 10.1109/jssc.2024.3385337
Chenyu Huang 1 , Chenchang Zhan 2 , Xianglong Bai 1 , Yan Lu 1
Affiliation  

This article presents a 6.78-MHz single-stage bipolar-output regulating (SSBOR) rectifier with symmetrical structure for active-matrix organic light-emitting diode (AMOLED) displays. The proposed full-wave rectifier converts ac power to positive and negative dc voltages through six ON-chip switches. To handle high voltage stress, four power switches are stacked MOS as full-bridge rectifying transistors, while two single-NMOS switches are connected between the ac nodes and ground, providing paths for unequal load currents with low conduction loss. This high-integration structure improves power conversion efficiency and reduces chip area. Besides, since the ac current in the series-resonant LC tank varies little with different output loads, there would be negligible cross-regulation during transient response. Two independent pulsewidth modulation (PWM) and type-II compensation circuits work in each output feedback loop. Fabricated in 180-nm BCD process, using only 5-V devices, this proposed rectifier obtains +5- and −5-V bipolar outputs with a maximum of 500-mA output current each. The measurement results show 86.4% peak power conversion efficiency, less than 15- $\mu \text{s}$ transient recovery time and 103-mV overshoot/undershoot with 50–400-mA load steps, and unnoticeable cross-regulation.

中文翻译:


用于无线显示的具有可忽略交叉调节的单级双极输出调节整流器



本文介绍了一种用于有源矩阵有机发光二极管 (AMOLED) 显示器的对称结构的 6.78 MHz 单级双极输出调节 (SSBOR) 整流器。所提出的全波整流器通过六个片上开关将交流电转换为正负直流电压。为了应对高压应力,四个功率开关堆叠为 MOS 作为全桥整流晶体管,而两个单 NMOS 开关连接在交流节点和地之间,为不相等的负载电流提供低导通损耗的路径。这种高集成度的结构提高了功率转换效率并减少了芯片面积。此外,由于串联谐振LC谐振回路中的交流电流随输出负载的不同而变化很小,因此瞬态响应期间的交叉调节可以忽略不计。每个输出反馈环路中都有两个独立的脉宽调制 (PWM) 和 II 类补偿电路。该整流器采用 180 nm BCD 工艺制造,仅使用 5 V 器件,获得 +5 V 和 −5 V 双极输出,每个输出电流最大为 500 mA。测量结果显示峰值功率转换效率为86.4%,小于15- $\mu \文本{s}$瞬态恢复时间和 50–400mA 负载阶跃下的 103mV 过冲/下冲,以及不明显的交叉调节。
更新日期:2024-04-11
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