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Micro-transfer Printed Thin Film Lithium Niobate (TFLN)-on-Silicon Ring Modulator
ACS Photonics ( IF 6.5 ) Pub Date : 2024-04-12 , DOI: 10.1021/acsphotonics.3c01869
Ying Tan 1, 2, 3 , Shengpu Niu 4 , Maximilien Billet 1, 2, 3, 5 , Nishant Singh 4 , Margot Niels 1, 3 , Tom Vanackere 1, 2, 3, 5 , Joris Van Kerrebrouck 4 , Gunther Roelkens 1, 2, 3 , Bart Kuyken 1, 2, 3 , Dries Van Thourhout 1, 2, 3
Affiliation  

Thin-film lithium niobate (TFLN) has a proven record of building high-performance electro-optical (EO) modulators. However, its CMOS incompatibility and the need for non-standard etching have consistently posed challenges in terms of scalability, standardization, and the complexity of integration. Heterogeneous integration comes to solve this key challenge. Micro-transfer printing of thin-film lithium niobate brings TFLN to the well-established silicon ecosystem by easy “pick and place”, which showcases immense potential in constructing high-density, cost-effective, highly versatile heterogeneous integrated circuits. Here, we demonstrated for the first time a micro-transfer printed thin film lithium niobate (TFLN)-on-silicon ring modulator, which is an important step towards dense integration of performant lithium niobate modulators with compact and scalable silicon circuity. The presented device exhibits an insertion loss of −1.5 dB, extinction ratio of −37 dB, electro-optical bandwidth of 16 GHz, and modulation rates up to 45 Gbits−1.

中文翻译:

硅基微转移印刷薄膜铌酸锂 (TFLN) 环形调制器

薄膜铌酸锂 (TFLN) 在构建高性能电光 (EO) 调制器方面拥有良好的记录。然而,其 CMOS 不兼容性和对非标准蚀刻的需求一直在可扩展性、标准化和集成复杂性方面带来挑战。异构集成旨在解决这一关键挑战。薄膜铌酸锂的微转移印刷通过简单的“拾取和放置”将TFLN带入完善的硅生态系统,这在构建高密度、经济高效、高度通用的异构集成电路方面展示了巨大的潜力。在这里,我们首次展示了硅环上微转移印刷薄膜铌酸锂(TFLN)调制器,这是高性能铌酸锂调制器与紧凑且可扩展的硅电路密集集成的重要一步。该器件的插入损耗为-1.5 dB,消光比为-37 dB,电光带宽为16 GHz,调制速率高达45 Gbits -1
更新日期:2024-04-12
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