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2D WS2/WSe2(Er) Heterojunction for High Performance Photodetectors
Advanced Materials Technologies ( IF 6.4 ) Pub Date : 2024-04-08 , DOI: 10.1002/admt.202302095
Yin Chen 1, 2 , Xianxiao Liang 1, 2 , Shaoxiang Liu 2, 3 , Zuqiang Huang 2, 3 , Zepeng Wu 1, 2 , Xiu Liu 2 , Zeyun Xiao 2 , Xiaoyu Peng 2 , Xuan Shi 1, 2, 3 , Hongquan Zhao 4
Advanced Materials Technologies ( IF 6.4 ) Pub Date : 2024-04-08 , DOI: 10.1002/admt.202302095
Yin Chen 1, 2 , Xianxiao Liang 1, 2 , Shaoxiang Liu 2, 3 , Zuqiang Huang 2, 3 , Zepeng Wu 1, 2 , Xiu Liu 2 , Zeyun Xiao 2 , Xiaoyu Peng 2 , Xuan Shi 1, 2, 3 , Hongquan Zhao 4
Affiliation
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2D transition metal dichalcogenides and their heterojunctions have demonstrated great potentialities for applications in optoelectronics, and rare-earth doping has proven an effective way for achieving high performance. Here, 2D WS2 and Er3+ in situ doped WSe2 are prepared by the chemical vapor deposition method. Thicknesses and atomic structures of the prepared WS2 and WSe2 are characterized by atomic force microscopy and transmission electron microscope, while qualities of the membranes are characterized by photoluminescence spectroscopy and Raman spectroscopy, respectively. The 13.7 and 15.8 at% of Er3+ doping concentration in WSe2 are examined by energy dispersive spectroscopy and X-ray photoelectron spectroscopy, respectively. Performances of photodetectors based on the WSe2 and Er3+ doped WSe2 membranes are characterized individually. A microregion fixed-point transfer technique is used to transfer the monolayer WS2 onto the Er-doped monolayer WSe2 to form vertical van der Waals heterojunctions. Excellent performances are measured from the monolayer WS2/WSe2(Er3+) heterojunction photodetector with a photoresponsivity (Rλ) of up to 40.5 A W−1 and external quantum efficiency (EQE) of 8793%. The results prove the effectiveness of Er3+ in situ doping in WS2/WSe2(Er) heterojunctions for high-performance photodetectors.
中文翻译：
用于高性能光电探测器的 2D WS2/WSe2(Er) 异质结
二维过渡金属二硫属化物及其异质结在光电子领域显示出巨大的应用潜力，而稀土掺杂已被证明是实现高性能的有效途径。这里，通过化学气相沉积方法制备了原位掺杂的2D WS 2 和Er 3+ WSe 2 。利用原子力显微镜和透射电子显微镜表征了所制备的WS 2 和WSe 2 的厚度和原子结构，并分别利用光致发光光谱和拉曼光谱表征了膜的质量。通过能量色散谱和X射线光电子能谱分别检测了WSe 2 中Er 3+ 掺杂浓度为13.7 at%和15.8 at%。基于WSe 2 和Er 3+ 掺杂WSe 2 膜的光电探测器的性能分别进行了表征。采用微区定点转移技术将单层WS 2 转移到Er掺杂单层WSe 2 上，形成垂直范德华异质结。单层 WS 2 /WSe 2 (Er 3+ ) 异质结光电探测器具有出色的性能，其光响应度 (R λ ) 为高达 40.5 A W −1 和外量子效率 (EQE) 8793%。结果证明了Er 3+ 原位掺杂在WS 2 /WSe 2 (Er)异质结中对于高性能光电探测器的有效性。
更新日期：2024-04-08
中文翻译：
用于高性能光电探测器的 2D WS2/WSe2(Er) 异质结
二维过渡金属二硫属化物及其异质结在光电子领域显示出巨大的应用潜力，而稀土掺杂已被证明是实现高性能的有效途径。这里，通过化学气相沉积方法制备了原位掺杂的2D WS 2 和Er 3+ WSe 2 。利用原子力显微镜和透射电子显微镜表征了所制备的WS 2 和WSe 2 的厚度和原子结构，并分别利用光致发光光谱和拉曼光谱表征了膜的质量。通过能量色散谱和X射线光电子能谱分别检测了WSe 2 中Er 3+ 掺杂浓度为13.7 at%和15.8 at%。基于WSe 2 和Er 3+ 掺杂WSe 2 膜的光电探测器的性能分别进行了表征。采用微区定点转移技术将单层WS 2 转移到Er掺杂单层WSe 2 上，形成垂直范德华异质结。单层 WS 2 /WSe 2 (Er 3+ ) 异质结光电探测器具有出色的性能，其光响应度 (R λ ) 为高达 40.5 A W −1 和外量子效率 (EQE) 8793%。结果证明了Er 3+ 原位掺杂在WS 2 /WSe 2 (Er)异质结中对于高性能光电探测器的有效性。
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