Complementary metal-oxide-semiconductor (CMOS) detectors are a competitive choice for current and upcoming astronomical missions. To understand the performance variations of CMOS detectors in the space environment, we investigate the total ionizing dose effects on custom-made large-format X-ray CMOS detectors. Three CMOS detector samples were irradiated with a Co60 source with a total dose of 70 and 105 krad. We test and compare the performance of these detectors before and after irradiation. After irradiation, the dark current increases by roughly 20∼100 times, and the readout noise increases from 3 e− to 6 e−. The bias level at 50 ms integration time decreases by 13 to 18 digital number (DN) at −30°C. The energy resolution increases from ∼150 to ∼170 eV at 4.5 keV at −30°C. The conversion gain of the detectors varies for <2% after the irradiation. Furthermore, there are about 50 pixels in which bias at 50 ms has changed by more than 20 DN after the exposure to the radiation and about 30 to 140 pixels in which the readout noise has increased by over 20 e− at −30°C at 50 ms integration time. These results demonstrate that the performances of large-format CMOS detectors do not suffer significant degeneration in space environment.

中文翻译：

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辐射对 X 射线天文学科学互补金属氧化物半导体探测器的影响：II。总电离剂量照射

互补金属氧化物半导体 (CMOS) 探测器是当前和即将到来的天文任务的竞争选择。为了了解 CMOS 探测器在太空环境中的性能变化，我们研究了定制大幅面 X 射线 CMOS 探测器的总电离剂量效应。使用总剂量为 70 和 105 krad 的 Co60 源照射三个 CMOS 探测器样品。我们测试并比较了这些探测器在辐照前后的性能。照射后，暗电流增加约20∼100倍，读出噪声从3 e−增加到6 e−。 -30°C 时，50 ms 积分时间的偏置电平降低 13 至 18 个数字 (DN)。在-30°C、4.5 keV 时，能量分辨率从~150 eV 增加到~170 eV。照射后探测器的转换增益变化<2%。此外，大约有 50 个像素在暴露于辐射后，50 ms 时的偏置变化超过 20 DN，大约 30 到 140 个像素的读出噪声在 -30°C 时增加了 20 e− 以上。 50 毫秒积分时间。这些结果表明，大尺寸 CMOS 探测器的性能在太空环境中不会出现明显的退化。