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Curved Nanoflakes of Alkane-Grafted Ti3C2Tx MXene Thin Flims for Enhanced Terahertz Electromagnetic Interference Shielding
ACS Applied Nano Materials ( IF 5.3 ) Pub Date : 2024-04-04 , DOI: 10.1021/acsanm.4c00781 Zhenyu Zhao 1, 2 , Iddo Pinkas 2 , Chenhao Zhang 3 , Yufei Xiao 3 , Xiaomeng Sui 2 , Olga Brontvein 2 , Hui Li 3
ACS Applied Nano Materials ( IF 5.3 ) Pub Date : 2024-04-04 , DOI: 10.1021/acsanm.4c00781 Zhenyu Zhao 1, 2 , Iddo Pinkas 2 , Chenhao Zhang 3 , Yufei Xiao 3 , Xiaomeng Sui 2 , Olga Brontvein 2 , Hui Li 3
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The sixth-generation wireless communication (6G) extends the electromagnetic pollution up to the terahertz band. The two-dimensional titanium carbide of intercalated structure Ti3C2Tx MXene attracts much attention because it exhibits high terahertz electromagnetic interference (EMI) shielding effectiveness (SE) due to the large intrinsic electrical conductivity as well as few-atom monosheet thickness. Scientists worldwide are making continuous efforts to optimize the MXene structures for EMI shielding application. Innovatively, we demonstrate a chemical method to bend the nanoflake by grafting two types of alkane, octane (C8H18) and dodecane (C12H26), onto the surface terminals. The chain length of alkane exceeds the bond length of surface functionalities Tx (=O, −OH, −F) to introduce intrananoflake and internanoflake strains into Ti3C2Tx MXene. The nanoflake’s deformation leads to Raman peak redshift and broader line width. The element distribution shows that the alkane increases the oxygen–fluorine ratio of Ti3C2Tx MXene from 3:2 to 3:1 (Ti3C2Tx-C8H18) and even up to 4:1 (Ti3C2Tx-C12H26). Electronic microscopy (SEM/TEM) shows obvious edge-fold and tensile/compressive deformation of the nanoflake. The EMI SE of Ti3C2Tx-C12H26 achieves 35 dB, which is higher than those of Ti3C2Tx-C8H18 (26 dB) and Ti3C2Tx MXene (22 dB). The alkane grafting increases the absorption coefficient of the MXene thin film by more than 50% but has negligible contribution to the refractive index. Meanwhile, the conductivity of Ti3C2Tx-C8H18 MXene is over twice higher than that of Ti3C2Tx MXene, whereas the conductivity of Ti3C2Tx-C12H26 is three times higher than that of Ti3C2Tx MXene. The nanoflake curvature of alkane grafted Ti3C2Tx MXene enlarges the specific surface area and causes topological defects, which increase the absorption as well as the conductivity so that the terahertz EMI SE is enhanced correspondingly. The realization of Ti3C2Tx MXene of curved nanoflake for the enhancement of terahertz EMI SE is valuable for 6G electromagnetic protection.
中文翻译：
用于增强太赫兹电磁干扰屏蔽的烷烃接枝 Ti3C2TX MXene 薄膜的弯曲纳米薄片
第六代无线通信（6G）将电磁污染扩展到太赫兹频段。插层结构Ti 3 C 2 T x MXene的二维碳化钛因其大的本征电导率和少原子单片厚度而表现出高太赫兹电磁干扰（EMI）屏蔽效能（SE）而备受关注。世界各地的科学家正在不断努力优化用于 EMI 屏蔽应用的 MXene 结构。创新地，我们展示了一种化学方法，通过将两种类型的烷烃，辛烷（C 8 H 18）和十二烷（C 12 H 26）接枝到表面末端来弯曲纳米薄片。烷烃的链长超过表面官能团T x (=O、-OH、-F)的键长，从而将纳米片内和纳米片内应变引入Ti 3 C 2 T x MXene中。纳米片的变形导致拉曼峰红移和更宽的线宽。元素分布表明烷烃将 Ti 3 C 2 T x MXene的氧氟比从 3:2 增加到 3:1 (Ti 3 C 2 T x -C 8 H 18 )，甚至达到 4:1 ( Ti 3 C 2 T x -C 12 H 26 )。电子显微镜（SEM/TEM）显示纳米片有明显的边缘折叠和拉伸/压缩变形。 Ti 3 C 2 T x -C 12 H 26的 EMI SE达到 35 dB，高于 Ti 3 C 2 T x -C 8 H 18 (26 dB) 和 Ti 3 C 2 T x MXene (22 D b）。烷烃接枝使MXene薄膜的吸收系数增加了50%以上，但对折射率的贡献可以忽略不计。同时，Ti 3 C 2 T x -C 8 H 18 MXene的电导率比 Ti 3 C 2 T x MXene高出两倍以上，而 Ti 3 C 2 T x -C 12 H 26的电导率则高出两倍以上。比 Ti 3 C 2 T x MXene 高三倍。烷烃接枝Ti 3 C 2 T x MXene的纳米片曲率增大了比表面积并引起拓扑缺陷，从而增加了吸收和电导率，从而相应增强了太赫兹EMI SE。实现弯曲纳米片Ti 3 C 2 T x MXene增强太赫兹EMI SE对于6G电磁防护具有重要价值。
更新日期：2024-04-04
中文翻译：
用于增强太赫兹电磁干扰屏蔽的烷烃接枝 Ti3C2TX MXene 薄膜的弯曲纳米薄片
第六代无线通信（6G）将电磁污染扩展到太赫兹频段。插层结构Ti 3 C 2 T x MXene的二维碳化钛因其大的本征电导率和少原子单片厚度而表现出高太赫兹电磁干扰（EMI）屏蔽效能（SE）而备受关注。世界各地的科学家正在不断努力优化用于 EMI 屏蔽应用的 MXene 结构。创新地，我们展示了一种化学方法，通过将两种类型的烷烃，辛烷（C 8 H 18）和十二烷（C 12 H 26）接枝到表面末端来弯曲纳米薄片。烷烃的链长超过表面官能团T x (=O、-OH、-F)的键长，从而将纳米片内和纳米片内应变引入Ti 3 C 2 T x MXene中。纳米片的变形导致拉曼峰红移和更宽的线宽。元素分布表明烷烃将 Ti 3 C 2 T x MXene的氧氟比从 3:2 增加到 3:1 (Ti 3 C 2 T x -C 8 H 18 )，甚至达到 4:1 ( Ti 3 C 2 T x -C 12 H 26 )。电子显微镜（SEM/TEM）显示纳米片有明显的边缘折叠和拉伸/压缩变形。 Ti 3 C 2 T x -C 12 H 26的 EMI SE达到 35 dB，高于 Ti 3 C 2 T x -C 8 H 18 (26 dB) 和 Ti 3 C 2 T x MXene (22 D b）。烷烃接枝使MXene薄膜的吸收系数增加了50%以上，但对折射率的贡献可以忽略不计。同时，Ti 3 C 2 T x -C 8 H 18 MXene的电导率比 Ti 3 C 2 T x MXene高出两倍以上，而 Ti 3 C 2 T x -C 12 H 26的电导率则高出两倍以上。比 Ti 3 C 2 T x MXene 高三倍。烷烃接枝Ti 3 C 2 T x MXene的纳米片曲率增大了比表面积并引起拓扑缺陷，从而增加了吸收和电导率，从而相应增强了太赫兹EMI SE。实现弯曲纳米片Ti 3 C 2 T x MXene增强太赫兹EMI SE对于6G电磁防护具有重要价值。
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