Vacancy-Engineered Nickel Ferrite Forming-Free Low-Voltage Resistive Switches for Neuromorphic Circuits,ACS Applied Materials & Interfaces

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Vacancy-Engineered Nickel Ferrite Forming-Free Low-Voltage Resistive Switches for Neuromorphic Circuits
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2024-04-05 , DOI: 10.1021/acsami.4c01501
Rajesh Kumar R ₁ , Alexei Kalaboukhov ₂ , Yi-Chen Weng ₃ , K N Rathod ₁ , Ted Johansson ₄ , Andreas Lindblad ₃ , M Venkata Kamalakar ₃ , Tapati Sarkar ₁

Affiliation

Innovations in resistive switching devices constitute a core objective for the development of ultralow-power computing devices. Forming-free resistive switching is a type of resistive switching that eliminates the need for an initial high voltage for the formation of conductive filaments and offers promising opportunities to overcome the limitations of traditional resistive switching devices. Here, we demonstrate mixed charge state oxygen vacancy-engineered electroforming-free resistive switching in NiFe₂O₄ (NFO) thin films, fabricated as asymmetric Ti/NFO/Pt heterostructures, for the first time. Using pulsed laser deposition in a controlled oxygen atmosphere, we tune the oxygen vacancies together with the cationic valence state in the nickel ferrite phase, with the latter directly affecting the charge state of the oxygen vacancies. The structural integrity and chemical composition of the films are confirmed by X-ray diffraction and hard X-ray photoelectron spectroscopy, respectively. Electrical transport studies reveal that resistive switching characteristics in the films can be significantly altered by tuning the amount and charge state of the oxygen vacancy concentration during the deposition of the films. The resistive switching mechanism is seen to depend upon the migration of both singly and doubly charged oxygen vacancies formed as a result of changes in the nickel valence state and the consequent formation/rupture of conducting filaments in the switching layer. This is supported by the existence of an optimum oxygen vacancy concentration for efficient low-voltage resistive switching, below or above which the switching process is inhibited. Along with the filamentary switching mechanism, the Ti top electrode also enhances the resistive switching performance due to interfacial effects. Time-resolved measurements on the devices display both long- and short-term potentiation in the optimized vacancy-engineered NFO resistive switches, ideal for solid-state synapses achieved in a single system. Our work on correlated oxide forming-free resistive switches holds significant potential for CMOS-compatible low-power, nonvolatile resistive memory and neuromorphic circuits.

中文翻译：

用于神经形态电路的空位设计无形成镍铁氧体低压电阻开关

电阻开关器件的创新构成了超低功耗计算设备开发的核心目标。免成型电阻开关是电阻开关的一种，它不需要初始高电压来形成导电丝，并为克服传统电阻开关器件的局限性提供了有希望的机会。在这里，我们首次在 NiFe ₂ O ₄ (NFO) 薄膜中展示了混合电荷态氧空位设计的无电铸电阻切换，该薄膜被制造为不对称 Ti/NFO/Pt 异质结构。在受控氧气氛中使用脉冲激光沉积，我们调节铁氧体镍相中的氧空位和阳离子价态，后者直接影响氧空位的电荷状态。薄膜的结构完整性和化学成分分别通过X射线衍射和硬X射线光电子能谱证实。电传输研究表明，通过调节薄膜沉积过程中氧空位浓度的数量和电荷状态，可以显着改变薄膜的电阻开关特性。电阻切换机制被认为取决于由于镍价态变化而形成的单电荷和双电荷氧空位的迁移以及随后的切换层中导电丝的形成/断裂。这得到了有效低压电阻开关的最佳氧空位浓度的存在的支持，低于或高于该浓度，开关过程都会受到抑制。除了丝状开关机制之外，钛顶部电极还由于界面效应而增强了电阻开关性能。器件上的时间分辨测量显示了优化的空位设计的 NFO 电阻开关的长期和短期增强，非常适合在单个系统中实现固态突触。我们在相关无氧化物形成电阻开关方面的工作对于 CMOS 兼容的低功耗、非易失性电阻存储器和神经形态电路具有巨大的潜力。

更新日期：2024-04-05

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