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Beyond Conventional Charge Density Wave for Strongly Enhanced 2D Superconductivity in 1H-TaS2 Superlattices
Advanced Materials ( IF 27.4 ) Pub Date : 2024-04-03 , DOI: 10.1002/adma.202312341 Zejun Li 1, 2, 3 , Pin Lyu 2 , Zhaolong Chen 4, 5 , Dandan Guan 6 , Shuang Yu 7 , Jinpei Zhao 4 , Pengru Huang 4, 8 , Xin Zhou 2 , Zhizhan Qiu 4 , Hanyan Fang 2 , Makoto Hashimoto 9 , Donghui Lu 9 , Fei Song 10 , Kian Ping Loh 2 , Yi Zheng 7 , Zhi-Xun Shen 9, 11 , Kostya S Novoselov 4 , Jiong Lu 2, 4
Advanced Materials ( IF 27.4 ) Pub Date : 2024-04-03 , DOI: 10.1002/adma.202312341 Zejun Li 1, 2, 3 , Pin Lyu 2 , Zhaolong Chen 4, 5 , Dandan Guan 6 , Shuang Yu 7 , Jinpei Zhao 4 , Pengru Huang 4, 8 , Xin Zhou 2 , Zhizhan Qiu 4 , Hanyan Fang 2 , Makoto Hashimoto 9 , Donghui Lu 9 , Fei Song 10 , Kian Ping Loh 2 , Yi Zheng 7 , Zhi-Xun Shen 9, 11 , Kostya S Novoselov 4 , Jiong Lu 2, 4
Affiliation
Noncentrosymmetric transition metal dichalcogenide (TMD) monolayers offer a fertile platform for exploring unconventional Ising superconductivity (SC) and charge density waves (CDWs). However, the vulnerability of isolated monolayers to structural disorder and environmental oxidation often degrade their electronic coherence. Herein, an alternative approach is reported for fabricating stable and intrinsic monolayers of 1H-TaS2 sandwiched between SnS blocks in a (SnS)1.15TaS2 van der Waals (vdW) superlattice. The SnS block layers not only decouple individual 1H-TaS2 sublayers to endow them with monolayer-like electronic characteristics, but also protect the 1H-TaS2 layers from electronic degradation. The results reveal the characteristic 3 × 3 CDW order in 1H-TaS2 sublayers associated with electronic rearrangement in the low-lying sulfur p band, which uncovers a previously undiscovered CDW mechanism rather than the conventional Fermi surface-related framework. Additionally, the (SnS)1.15TaS2 superlattice exhibits a strongly enhanced Ising-like SC with a layer-independent Tc of ≈3.0 K, comparable to that of the isolated monolayer 1H-TaS2 sample, presumably attributed to their monolayer-like characteristics and retained Fermi states. These results provide new insights into the long-debated CDW order and enhanced SC of monolayer 1H-TaS2, establishing bulk vdW superlattices as promising platforms for investigating exotic collective quantum phases in the 2D limit.
中文翻译:
超越传统电荷密度波,显着增强 1H-TaS2 超晶格中的二维超导性
非中心对称过渡金属二硫化物(TMD)单层为探索非常规伊辛超导(SC)和电荷密度波(CDW)提供了丰富的平台。然而,孤立的单分子层对结构紊乱和环境氧化的脆弱性往往会降低其电子相干性。在此,报道了一种替代方法,用于制造夹在(SnS) 1.15 TaS 2范德华(vdW)超晶格中的SnS块之间的稳定且本征的1H-TaS 2单层。 SnS阻挡层不仅可以解耦各个1H-TaS 2子层以赋予它们类似单层的电子特性,而且还可以保护1H-TaS 2层免遭电子退化。结果揭示了 1H-TaS 2亚层中与低位硫 p 带中的电子重排相关的特征性 3 × 3 CDW 顺序,这揭示了以前未被发现的 CDW 机制,而不是传统的费米表面相关框架。此外,(SnS) 1.15 TaS 2超晶格表现出强烈增强的类 Ising SC,其与层无关的T c约为 3.0 K,与孤立的单层 1H-TaS 2样品相当,这可能归因于它们的单层样特性并保留费米态。这些结果为长期争论的 CDW 顺序和单层 1H-TaS 2的增强 SC 提供了新的见解,建立了体 vdW 超晶格作为研究二维极限中奇异集体量子相的有前途的平台。
更新日期:2024-04-03
中文翻译:
超越传统电荷密度波,显着增强 1H-TaS2 超晶格中的二维超导性
非中心对称过渡金属二硫化物(TMD)单层为探索非常规伊辛超导(SC)和电荷密度波(CDW)提供了丰富的平台。然而,孤立的单分子层对结构紊乱和环境氧化的脆弱性往往会降低其电子相干性。在此,报道了一种替代方法,用于制造夹在(SnS) 1.15 TaS 2范德华(vdW)超晶格中的SnS块之间的稳定且本征的1H-TaS 2单层。 SnS阻挡层不仅可以解耦各个1H-TaS 2子层以赋予它们类似单层的电子特性,而且还可以保护1H-TaS 2层免遭电子退化。结果揭示了 1H-TaS 2亚层中与低位硫 p 带中的电子重排相关的特征性 3 × 3 CDW 顺序,这揭示了以前未被发现的 CDW 机制,而不是传统的费米表面相关框架。此外,(SnS) 1.15 TaS 2超晶格表现出强烈增强的类 Ising SC,其与层无关的T c约为 3.0 K,与孤立的单层 1H-TaS 2样品相当,这可能归因于它们的单层样特性并保留费米态。这些结果为长期争论的 CDW 顺序和单层 1H-TaS 2的增强 SC 提供了新的见解,建立了体 vdW 超晶格作为研究二维极限中奇异集体量子相的有前途的平台。