MBE 生长的三层 WSe2 薄膜中的堆叠顺序和电子能带结构,Physical Review B

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MBE 生长的三层 WSe2 薄膜中的堆叠顺序和电子能带结构
Physical Review B ( IF 3.2 ) Pub Date : 2024-03-29 , DOI: 10.1103/physrevb.109.115437
Aymen Mahmoudi ₁ , Meryem Bouaziz ₁ , Niels Chapuis ₂ , Fabrice Oehler ₁ , Pavel Dudin ₃ , Davide Romanin ₁ , Gilles Patriarche ₁ , Julien Chaste ₁ , Fausto Sirotti ₄ , Xavier Wallart ₂ , Jose Avila ₃ , Abdelkarim Ouerghi ₁

Affiliation

过渡金属二硫化物（TMD）等少层量子材料正在为微电子和光电子领域的高效器件设计铺平道路。然而，来自不同家族的量子材料的异质结构虽然会极大地拓宽可能的应用范围，但仍然具有挑战性。在这里，我们展示了来自两个高度多功能家族的化合物的大规模集成：三维传统半导体 GaP 和二维 TMD 半导体

{硒化钨}_{2}

就其在电子、自旋电子和光子学应用方面的潜力而言，这是特别有趣的。我们证明了 2 H -2 H（或AA′A）三层

{硒化钨}_{2}

可以通过分子束外延（MBE）在磷化镓（GaP）衬底上生长。锐利、高品质

{硒化钨}_{2}

通过扫描高分辨率透射电子显微镜和X射线光电子能谱证实了-GaP界面。我们对三层的价带结构进行了实验和理论相结合的研究

{硒化钨}_{2}

。纳米角分辨光电子能谱和密度泛函理论计算表明，三层电子分布在与K谷和 γ 谷相关的两个不同的子带中，沿 γ M方向的有效质量约为 0.27，

0.5 米_{e}

，分别（

米_{e}

是裸电子质量）。

"点击查看英文标题和摘要"

Stacking order and electronic band structure in MBE-grown trilayerWSe2films

Few-layer quantum materials, such as transition-metal dichalcogenides (TMDs), are paving the path to the design of high-efficiency devices in the field of microelectronics and optoelectronics. However, heterostructures of quantum materials coming from different families, while they would immensely broaden the range of possible applications, remain challenging. Here, we demonstrate the large-scale integration of compounds from two highly multifunctional families: the three-dimensional conventional semiconductor GaP and the two-dimensional TMD semiconductor

{WSe}_{2}

which is particularly interesting in terms of its potential for electronic, spintronic, and photonics applications. We show that a 2H-2H (or AA′A) trilayer of

{WSe}_{2}

can be grown by molecular-beam epitaxy (MBE) onto gallium phosphide (GaP) substrate. A sharp, high-quality

{WSe}_{2}

-GaP interface was confirmed by scanning high-resolution transmission electron microscopy and x-ray photoemission spectroscopy. We present a combined experimental and theoretical study of the structure of the valence band of trilayer

{WSe}_{2}

. Nanoangle-resolved photoemission spectroscopy and density-functional theory calculation show that trilayer electrons populate two distinct subbands associated with the K and Γ valleys, with effective masses along the ΓM direction about 0.27 and

0.5 m_{e}

, respectively (

m_{e}

is the bare electron mass).

更新日期：2024-03-29

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